Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiOx

Effect of Long Range Interactions on the Glass Transition Temperature of Thin Polystyrene Films

“…48,49 The structural difference between native and thermal oxide layers was actually observed in their electrical properties such as in their band gaps. 50 Thus, the oxide layer in various substrates may not be the same in terms of structure. If this is the case, then the short-range interactions in addition to the long ones are also a function of the thickness of the silicon oxide layer.…”

“…Taking into account that polymers in a thin film are far away from an equilibrium state, the aggregation states are also affected by the long-range interactions, leading to the alteration of the segmental dynamics of polymers. Second, the network structure of SiO x will not be well developed in a thin layer of a few nanometers, even more so in a thick layer where there is a structural gradient along the depth direction. , The structural difference between native and thermal oxide layers was actually observed in their electrical properties such as in their band gaps . Thus, the oxide layer in various substrates may not be the same in terms of structure.…”

Imaging at the Nanoscale

“…Ultrathin (<5 nm) films of different types (SiO 2 , SiO x , oxynitrides, organic) are used in ultralarge-scale integration electronics in metaleoxideesemiconductor (MOS) memories [50,51] and in GaAs-based devices. In all the cases, what is occurring is The local chemical composition, shown in (g), can still be unambiguously assigned by measuring the total force values over each surface atom and using the relative interaction ratios for Sn/Si and Pb/Si to attribute the three groups of maximum attractive forces to interactions measured over Sn, Pb and Si atoms (h).…”