In this letter we report on cubic CdS thin films with low resistivity by chemical bath deposition (CBD) technique and subsequent annealings in S2 and H2+In. Low temperature photoluminescence, x rays, and transmission spectra support the assumption that S2 annealings contribute to fill the vacancies in the as-deposited films leading to an enlargement of the CdS cubic cell. This fact is revealed by an increase in interplanar distances, evanescence of the PL red broad band, and decrease in band-gap energies. Cubic phase remains after H2+In annealing at higher temperatures. A resistivity as low as 11 Ω cm was obtained at an optimum annealing temperature of 350 °C.

Cadmium self-doped CdTe polycrystalline films were grown on Corning glass substrates at room temperature by cosputtering from a CdTe-Cd target. The electrical, structural, and optical properties of the films were analyzed as a function of the Cd concentration. Films with a stoichiometric composition, and slightly below and above it, were prepared. In films where the Te exceeds 50 at. %, it is found segregation of Te and its electrical resistivity is about 10 7 ⍀ cm. In those with an excess of Cd, the electrical resistivity drops several orders of magnitude, the carrier concentration increases, and the resistivity activation energy drops. From these results, we concluded that using this deposition method, n-type Cd self-doped CdTe polycrystalline films can be produced.

Cd 1−x Zn x Te thin films were prepared on 7059 Corning glass substrates using an rf magnetron sputtering system and CdTe(1−y)+ZnTe(y) targets. The concentration (x) of Zn in the films did not coincide with the relative weight (y) of the ZnTe powder in the compressed targets. Values of x were in the range 0–0.30 as determined from x-ray diffraction patterns. The band gap energy (Eg) of the Cd1−xZnxTe samples was calculated from the photoreflectance spectra measured on the films. The position of the experimental points in the Eg versus x plot show a deviation from the phenomenological quadratic relation Eg=Eg0+ax+bx2 calculated within the virtual crystal approximation (VCA). The depart of the Eg values for higher Zn concentrations from the expected VCA model is probably due to a larger clustering of Zn atoms and/or a percolation phenomena. We obtain fitted values for the parameters a and b within the VCA approach. Comparison with data reported by other authors is made.

No abstract

No abstract

It is well known that the development and determination of optical properties of ultrathin films is an important issue in many technological areas. In this work organic polyethylene (PE) and cobalt phthalocyanines (CoPc) ultrathin films were deposited over metal films using the r.f. sputtering and thermal evaporation techniques, respectively. Attenuated total reflection (ATR) measurements for the system organic film/metal at the surface plasmon resonance (SPR) were used for determining the thicknesses and optical properties of the PE and CoPc thin films. Thicknesses of the order of some nanometers were found, fitting the theoretical multilayer ATR model, for p polarization monochromatic light, to the experimental reflection data. The dielectric function of CoPc ultrathin films was determined at a wavelength of 632.8 nm. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

No abstract

No abstract