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Colloidal solid-solution-like Au-Ag alloy nanoclusters of different compositions were synthesized through citrate reduction of mixed metal ions of low concentrations, without using any other protective or capping agents. Optical absorption of the alloy nanoclusters was studied both theoretically and experimentally. The position of the surface plasmon resonance (SPR) absorption band of the nanoclusters could be tuned from 419 nm to 521 nm through the variation of their composition. Considering effective dielectric constant of the alloy, optical absorption spectra for the nanoclusters were calculated using Mie theory, and compared with the experimentally obtained spectra. Theoretically obtained optical spectra well resembled the experimental spectra when the true size distribution of the nanoparticles was considered. High-resolution transmission electron microscopy (HREM), high-angle annular dark field (HAADF) imaging, and energy dispersive spectroscopy (EDS) revealed the true alloy nature of the nanoparticles with nominal composition being preserved. The synthesis technique can be extended to other bimetallic alloy nanoclusters containing Ag.

Effect of bismuth oxide as a buffer layer on metal-lanthanum-substituted bismuth titanate-insulator-semiconductor structures

From photoacoustic (PA) experiments we determine the nonradiative carrier lifetime in direct band-gap semiconductors. We use the Rosencwaig and Gerscho model to calculate the PA signal in semiconductors taking into account the distinction between non-radiative and radiative carrier lifetimes. We have assumed that for our high quality crystalline samples, the main contribution to the non-radiative processes comes from CHCC and CHSH Auger recombination for n and p-type materials, respectively. For GaAs, InSb and GaSb samples, the experimental data obtained by means of an open photoacoustic cell were fitted to the theoretical model and we show that the values we determined for the non-radiative recombination lifetime agree well with those reported in the literature.

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In this work, the problem of the thermal characterization of two-layer systems by means of the photoacoustic technique is discussed. For a two-layer system under rear-side illumination conditions, we have applied the Rosencwaig and Gersho model for calculating the pressure fluctuation in the photoacoustic gas chamber. The limiting cases in which both layers are thermally thin, thermally thick and one layer is thermally thin and the other is thermally thick are discussed. When both layers are thermally thin, a consistent equation for the heat capacity is obtained and an effective thermal diffusivity equation is derived when both layers are thermally thick. In order to test our theoretical results, we apply them to two-layer systems consisting of AlGaAs layers of different Al concentrations, grown by liquid phase epitaxy on GaAs substrates. The results of our measurements are in good agreement with the theoretical predictions. Our results show the general character of the expression for the effective thermal diffusivity of two-layer systems reported by Mansanares et al (1990 Phys. Rev. B 42 4477).

CdS polycrystalline thin films were grown by the chemical bath deposition technique at 80 °C onto glass substrates. The films grow in the cubic crystalline structure as determined by x-ray diffraction analysis. After thermal annealing in S2 and Ar atmospheres, the CdS changes from the metastable zinc blende phase to a stable wurtzite one. The cubic-to-hexagonal transition temperature has been determined to be 370 °C, as seen by the photoluminescence spectra and the x-ray diffraction patterns of the different samples. These spectra show the well-known green emission band of the CdS centered at 2.4 eV for the as-grown sample, which shifts to 2.25 eV for the sample annealed at 365 °C just before the phase transition takes place. For the sample annealed at 374 °C, an abrupt blueshift of the green band occurs going back to an energy value of 2.4 eV, when the crystalline phase transition occurs.