Development of phase-pure CuSbS2 thin films by annealing thermally evaporated CuS/Sb2S3 stacking layer for solar cell applications

Structural evolution of chemically deposited binary stacks of Sb 2 S 3 ‐CuS to phase‐pure CuSbS 2 thin films and evaluation of device parameters of CuSbS 2 /CdS heterojunction

“…The optical band gap (E g ) of the films was estimated by plotting ( αhν ) 2 vs photon energy, hν (considering direct band gap transition) and extrapolating the straight‐line portion of the curve to the energy axis as shown in Figure . It can be seen that the band gap values for the CAS‐15m film is 1.58 eV and for the CAS‐2h is 1.35 eV with α > 10 4 cm −1 which are in agreement with previous experimental reports …”

“…However, cation disorder results in compositional inhomogeneity which hampers the electronic transport and hence hinders further improvement in cell performance . Currently, copper antimony sulfide (CAS) with a chalcostibite crystal structure (CuSbS 2 ) has been reported as a promising nontoxic absorber material due to its relevant photovoltaic properties such as p‐type conductivity, a direct band gap in the range of 1.4 to 1.6 eV which matches well to solar spectrum and high absorption coefficient of the order of >10 4 cm −1 . On the other hand, the selenium incorporated copper antimony system is gaining increased attention for photovoltaic (PV) applications as they have direct band gap ~1.2 eV (depending on Se content), high absorption coefficient (10 4 ‐10 5 cm −1 ), and favorable electrical properties .…”

“…The J ‐ V characteristics of their device showed open circuit voltage ( V oc ) of 0.665 V, short‐circuit current density ( J sc ) of 1.3 mA/cm 2 , fill factor (FF) = 0.62, and efficiency ( η ) = 0.6% under illumination of AM 1.5 G using a solar simulator . Similarly, Medina‐Montes et al fabricated solar cell of FTO/CdS/CuSbS 2 /C/Ag structure obtaining relatively low performance of their device with V OC = 70 mV, J SC = 0.55 mA/cm 2 , and FF = 25.3% . Banu et al reported a high conversion efficiency of 3.22% for Mo/CuSbS 2 /CdS/i‐ZnO/n‐ZnO:Al solar cell where the CuSbS 2 absorber was deposited using a hybrid ink …”

A Molecular Precursor‐Based Copper Antimony Sulfide Photodetector with Enhanced Performance by Silver Doping

“…Ternary copper chalcogenide semiconductor of CuSbS 2 has attracted extensive attention as one of the most promising DOI: 10.1002/aelm.202300380 materials for applications in thin film optoelectronic devices due to its nontoxic and crust-abundant elements, excellent chemical stability, high absorption coefficient (>10 5 cm −1 ), tunable carrier concentration (10 16 -10 18 cm −3 ), and high hole mobility of 49 cm 2 V −1 s −1 . [1][2][3][4][5][6] In addition, CuSbS 2 has emerged as a promising candidate for photovoltaic applications, [7][8][9][10][11][12][13][14] and researchers have conducted in-depth research in the field of photovoltaic applications of chalcogenide to further improve its power conversion efficiency through ion doping and interface engineering. Similar copper chalcogenide such as Cu 2 ZnSnS 4 also show good photovoltaic performance.…”

Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar Cells

“…CuSbS 2 is a direct bandgap material, which can be adjusted between 1.4 and 1.6 eV (Medina-Montes et al, 2018;Pal et al, 2020), and its optical absorption coefficient is greater than 10 5 cm −1 (Vinayakumar et al, 2019). Its grain growth temperature is within 300 °C-450 °C (Yang et al, 2014;Riha et al, 2017), which is lower than those of Cu (In, Ga) Se 2 and Cu 2 ZnSnS 4 .…”