DX centers and persistent photoconductivity in CdTe–In films

Rivera‐Alvarez, Z.; Hernández, Leonardo; Becerril, M.; Picos-Vega, A.; Zelaya-Ángel, O.; Ramı́rez-Bon, R.; Vargas-Garcı́a, J.R.

doi:10.1016/s0038-1098(99)00545-1

Cited by 16 publications

(6 citation statements)

References 22 publications

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“…The excitation intensity of the laser was 100 mW/cm 2 . The decay curve can be described by the wellknown stretched exponential function for complex relaxation kinetics, given by [18][19][20][21][22]:…”

Section: Photoconductivity and Persistent Photoconductivity (Ppc)mentioning

confidence: 99%

Electronic defects in the halide antiperovskite semiconductor Hg3Se2I2

Kim

Peters

et al. 2017

Phys. Rev. B

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Halide perovskites have emerged as a potential photoconducting material for photovoltaics and hard radiation detection. We investigate the nature of charge transport in the semi-insulating chalcohalide Hg 3 Se 2 I 2 compound using the temperature dependence of dark current, thermally stimulated current (TSC) spectroscopy, and photoconductivity measurements as well as firstprinciples density functional theory (DFT) calculations. Dark conductivity measurements and TSC spectroscopy indicate the presence of multiple shallow and deep level traps that have relatively low concentrations of the order of 10 13-10 15 cm-3 and capture cross sections of ~10-16 cm 2. A distinct persistent photoconductivity (PPC) is observed at both low temperatures (< 170 K) and high temperatures (> 230 K), with major implications for room temperature compound semiconductor radiation detection. From preliminary DFT calculations, the origin of the traps is attributed to intrinsic vacancy defects (V Hg , V Se , and V I) and interstitials (Se int) or other extrinsic impurities. The results point the way for future improvements in crystal quality and detector performance.

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Section: Photoconductivity and Persistent Photoconductivity (Ppc)mentioning

confidence: 99%

Electronic defects in the halide antiperovskite semiconductor Hg3Se2I2

Kim

Peters

et al. 2017

Phys. Rev. B

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“…Due to the local structure relaxation, a potential barrier is formed over which the recapture of a photoelectron requires thermal excitation that does not occur at sufficiently low temperatures, making the photogenerated conductivity persistent. In most of the reported results on persistent photoconductivity, the photoinduced conductivity was observed to decay very slowly after removal of photoexcitation [36][37][38][39][40].…”

Section: Resultsmentioning

confidence: 94%

Persistence in photoconductivity and optical property of nanostructured copper (II) phthalocyanine thin films

Karan¹,

Basak²,

Mallik³

2010

Current Applied Physics

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“…In that way, the ionic conductivity of PVA layer was improved,30 which implies also that PVA can, to some extent, protect photoactive semiconductors against degradation caused by oxidation, thermal decomposition or photopolymerization under strong laser illumination, and diffused metal ions. As to the observed transient delay of I under – V after the laser is switched off (Figure 1c), it is a favorable optoelectronic phenomenon termed ‘persistent photoconductivity’, which is usually found in inorganic materials at low temperature31 and occasionally in organics 32. Such persistent photoconductivity denotes the presence of a degenerate 2DEG.…”

Section: Methodsmentioning

confidence: 90%

Dipolar‐Modulated Charge‐Doped Trilayer Organic Semiconductor n–n Heterojunction

Liu

Ditte

et al. 2012

Small

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A novel dipolar-modulated charge-doped trilayer n-n organic heterojunction with a bidirectional tunable energy band discontinuity is constructed. The rectifying mechanism of the trilayer is similar to the rectifying and inverse-rectifying characteristics from n-p and p-n junctions, respectively. Zero-bias optoelectronic behavior and persistent photoconductivity are discovered. These results show that what are viewed as technological hurdles in the development of an organic n-n heterojunction should, in fact, lead to a better approach in organic optoelectronics.

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DX centers and persistent photoconductivity in CdTe–In films

Cited by 16 publications

References 22 publications

Electronic defects in the halide antiperovskite semiconductor Hg3Se2I2

Electronic defects in the halide antiperovskite semiconductor Hg3Se2I2

Persistence in photoconductivity and optical property of nanostructured copper (II) phthalocyanine thin films

Dipolar‐Modulated Charge‐Doped Trilayer Organic Semiconductor n–n Heterojunction

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