Electrochemical deposition of Cu-doped ZnTe films was investigated as a back contact material for CdTe solar cells. The deposition system consisted of a potentiostat, a substrate (cathode), a Pt counter electrode, and an Ag/AgCI reference electrode. Experimental conditions were: pH=2.5---4, deposition temperature=70 -80~ electrolyte concentration=0.02 M Zn 2, 10 ~ M TeO2, and deposition potential (V~) = -0.85 --1.0 V vs. Ag/AgC1. A cyclic voltammogram obtained from an ITO substrate showed a ZnTe reduction peak at V~ = -0.7 --0.9 V. A film obtained at pH=2.5, V,=-0.975 V showed the strongest ZnTe X-ray diffraction peak, but its surface morphology was not as smooth as the films made under the condition of pH=3--4, V,:-0.950V. Triethanolamine did not form a complex with Cu-" in acidic solution as needed for uniform Cu-doping, but oxalate anion and 1,10-phenanthroline did at pH=2-3. The efficiency of CdTe solar cells increased from 3.4% to 7.1% when Cu-doped ZnTe film was used as the back contact.