Cadmium self-doped CdTe polycrystalline films were grown on Corning glass substrates at room temperature by cosputtering from a CdTe-Cd target. The electrical, structural, and optical properties of the films were analyzed as a function of the Cd concentration. Films with a stoichiometric composition, and slightly below and above it, were prepared. In films where the Te exceeds 50 at. %, it is found segregation of Te and its electrical resistivity is about 10 7 ⍀ cm. In those with an excess of Cd, the electrical resistivity drops several orders of magnitude, the carrier concentration increases, and the resistivity activation energy drops. From these results, we concluded that using this deposition method, n-type Cd self-doped CdTe polycrystalline films can be produced.

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Transient photocurrents of double-layer structures were simulated by a random walk through a cubic lattice in this work. The canonical technique of time of flight was simulated to find the characteristics of the photocurrents shape when each layer had a different mobility. The results reproduce the main features of the experimental data from similar real experiments reported in the literature. Also, the origin of the peak shape of photocurrents is discussed and it is shown that it is related to a stochastic process which forces the out-ofequilibrium charge carriers to be injected from one layer to the other within a period of time (t,tϩdt) as given by a time-dependent probability (t)dt.

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