Interstitial Cd doping CdTe films by co-sputtering

Zelaya-Ángel, O.; Picos-Vega, A.; Ramı́rez-Bon, R.; Espinoza‐Beltrán, F.J.

doi:10.1016/s0042-207x(98)00186-9

Cited by 12 publications

(4 citation statements)

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“…Interest in the properties of CdTe films grown at low temperatures has increased in recent years especially for low cost solar cells applications [7][8][9][10][11][12]. It is known that the grain boundaries in polycrystalline CdTe thin films have a direct influence on the carrier transport and on the electrical properties of the device.…”

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confidence: 99%

Effects of CdCl₂ treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

Bacaksız¹,

Altunbaş

Yılmaz

et al. 2007

Cryst. Res. Technol.

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The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl 2 /treatment at 400°C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl 2 /annealing treatment. The microstructure observed for all films following the CdCl 2 /annealing treatment are granular, regardless of the as-deposited microstructure. The grain sizes are increased after the CdCl 2 /annealing treatment but now contain voids around the grain boundaries. The optical band gaps, E g , were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl 2 /treatment at 400°C for 30 min respectively. A progressive sharpening of the absorption edge upon heat treatment particularly for the CdCl 2 /treated was observed.

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Section: ____________________mentioning

confidence: 99%

Effects of CdCl₂ treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

Bacaksız¹,

Altunbaş

Yılmaz

et al. 2007

Cryst. Res. Technol.

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“…However, Hayashi et al [9] reported an increase in the conductivity to a maximum followed by a decrease to a minimum and increase again as the substrate temperature was increased. Concerning the stoichiometric dependence, Zelaya-Angel et al [10] have found that the resistivity of CdTe films with excess Te drops suddenly by about five orders when the Te content reaches 50 at%. However, Dawart et al [11] reported that the addition of excess Te or Cd decreases the film resistivity.…”

Section: Introductionmentioning

confidence: 99%

Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

El‐Mongy

Hashem

Ramadan

2005

Physica Status Solidi (a)

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The correlation between the structural characteristics (stoichiometry and crystallite size) of CdTe films and their electronic transport properties were the aims of the present study to bring attention to the dual importance of grain size and conversion of the semiconductivity type with changing film thickness. Two main parameters were considered: the substrate temperature and film thickness. Transport properties were influenced by grain boundaries as well as by native doping. Optical measurements showed two main direct transitions at energies: E 1 ≈ 1.55 eV (fundamental gap) and E 2 ≈ 2.49 eV (due to valence band splitting). Both transitions were found to be thickness dependent with a marked change at a film thickness of about 300 nm. In the case of low substrate temperature, the scaling relation between resistivity and grain size showed a deviation from linear behavior at a size of 20 nm and the transmission coefficient is reduced. Also, the deposition on cold substrate enhanced both dark and photoconductivity for films of thickness ≥300 nm. It is also proved that the carrier transport was affected by the transmission coef-ficient for carriers to pass a single grain boundary as well as the number of grain boundaries per mean free path.

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“…For this reason, the change in the c parameter observed in the present work occurs as a combined effect in view of the competing effects either increasing or decreasing trends in the value of c . For example, it is reported that lattice constant decreases as Cd concentration increases in CdTe thin film 38.…”

Section: Resultsmentioning

confidence: 99%

The influence of diffusion temperature on the structural, optical, and magnetic properties of nickel‐doped zinc oxysulfide thin films

Polat¹,

Aksu²,

Altunbaş³

et al. 2011

Physica Status Solidi (a)

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Phone: þ90 462 377 25 40, Fax: þ90 462 377 31 97We investigated the structural, optical, and magnetic properties of Ni-Zn(O,S) films. The Zn(O,S) films were deposited by a spray pyrolysis method on glass substrate. A thin Ni layer evaporated on these films served as the source for the diffusion doping. The XRD of the undoped films revealed the presence of two wurtzite phases corresponding to zinc sulfide (ZnS) and ZnO with a strong preferred orientation along the ZnS [002] direction. Results from scanning electron microscopy showed arrays of hexagonal micro-rods perpendicular to the substrate. Results from energy dispersive X-ray spectroscopy studies employing varying accelerating voltages suggested that Ni atomic concentration decreased towards to the back of the films in all Ni diffusion-doped samples but a more uniform distribution was obtained at increasing annealing temperatures. The optical transmission measurements showed that both undoped and Ni diffusion-doped films had a low average transmittance in the range of 8-35%. A decrease in the band gap was observed with Ni-doping from 3.44 to 3.38 eV upon diffusion-doping. The magnetization of films as a function of magnetic field and temperature were measured. Clear ferromagnetic loops were observed for the Ni-Zn(O,S) films.

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Interstitial Cd doping CdTe films by co-sputtering

Cited by 12 publications

References 11 publications

Effects of CdCl₂ treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

Effects of CdCl₂ treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

The influence of diffusion temperature on the structural, optical, and magnetic properties of nickel‐doped zinc oxysulfide thin films

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Interstitial Cd doping CdTe films by co-sputtering

Cited by 12 publications

References 11 publications

Effects of CdCl2 treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

Effects of CdCl2 treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

The influence of diffusion temperature on the structural, optical, and magnetic properties of nickel‐doped zinc oxysulfide thin films

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Effects of CdCl₂ treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

Effects of CdCl₂ treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures