We fabricate a 32 × 32 silicon photonics switch on a 300-mm silicon-on-insulator wafer by using our complementary metal-oxide-semiconductor pilot line equipped with an immersion ArF scanner and demonstrate an average fiber-to-fiber insertion loss of 10.8 dB with a standard deviation of 0.54 dB, and on-chip electric power consumption of 1.9 W. The insertion loss and the power consumption are approximately 1/60, and less than 1/4 of our previous results, respectively. These significant improvements are achieved by design and fabrication optimization of waveguides and intersections on the chip, and by employing a novel optical fiber connector based on extremely-high-Δ silica planarlightwave-circuit (PLC) technology. The minimum crosstalk was −26.6 dB at a wavelength of 1547 nm, and −20-dB crosstalk bandwidth was 3.5 nm. Furthermore, we demonstrate low-crosstalk bandwidth expansion by using output port exchanged element switches. We achieve a −20 dB crosstalk bandwidth of 14.2 nm, which is four-times wider than that of the conventional element switch based 32 × 32 switch.

We demonstrate a record-high extinction-ratio of 50.4 dB in a 2 × 2 silicon Mach-Zehnder switch equipped with a variable splitter as the front 3-dB splitter. The variable splitter is adjusted to compensate for the splitting-ratio mismatch between the front and rear 3-dB splitters. The high extinction ratio does not rely on waveguide crossings and meets a strong demand in applications to multiport circuit switches. Large fabrication tolerance will make the high extinction ratio compatible with a volume production with standard complementary metal-oxide semiconductor fabrication facilities.

We demonstrate a 32 × 32 path-independent-insertion-loss optical path switch that integrates 1024 thermooptic Mach-Zehnder switches and 961 intersections on a small, 11 × 25 mm2 die. The switch is fabricated on a 300-mm-diameter silicon-on-insulator wafer by a complementary metal-oxide semiconductor-compatible process with advanced ArF immersion lithography. For reliable electrical packaging, the switch chip is flip-chip bonded to a ceramic interposer that arranges the electrodes in a 0.5-mm pitch land grid array. The on-chip loss is measured to be 15.8 ± 1.0 dB, and successful switching is demonstrated for digital-coherent 43-Gb/s QPSK signals. The total crosstalk of the switch is estimated to be less than -20 dB at the center wavelength of 1545 nm. The bandwidth narrowing caused by dimensional errors that arise during fabrication is discussed.

We have studied low-dispersion slow light and its nonlinear enhancement in photonic crystal waveguides. In this work, we fabricated the waveguides using Si CMOS-compatible process. It enables us to integrate spotsize converters, which greatly simplifies the optical coupling from fibers as well as demonstration of the nonlinear enhancement. Two-photon absorption, self-phase modulation and four-wave mixing were observed clearly for picosecond pulses in a 200-μm-long device. In comparison with Si wire waveguides, a 60-120 fold higher nonlinearity was evaluated for a group index of 51. Unique intensity response also occurred due to the specific transmission spectrum and enhanced nonlinearities. Such slow light may add various functionalities in Si photonics, while loss reduction is desired for ensuring the advantage of slow light.

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We report on the fabrication of chalcogenide glass (Ag-As(2)Se(3)) photonic crystal waveguides and the first detailed characterization of the linear and nonlinear optical properties. The waveguides, fabricated by e-beam lithography and ICP etching exhibit typical transmission spectra of photonic crystal waveguides, and exhibit high optical nonlinearity. Nonlinear phase shift of 1.5pi through self-phase modulation is observed at 0.78 W input peak power in a 400 microm long device. The effective nonlinear parameter gamma(eff) estimated from this result reaches 2.6 x 10(4) W(-1)m(-1). Four-wave mixing is also observed in the waveguide, while two-photon absorption at optical communication wavelengths is sufficiently small and the corresponding figure of merit is larger than 11.

A precise flip-chip bonding (FCB) technology for indium phosphide semiconductor optical amplifiers (InP-SOAs) on a silicon photonics platform within less than ±1-µm alignment accuracy was developed. For efficient optical coupling and a relaxed alignment tolerance, the mode field on both the InP-SOAs and the Si waveguides was expanded by spot-size converters (SSCs). On the InP-SOAs, width-tapered SSCs were used to obtain an isotropic mode-field having an approximately a 3-µm diameter. On the silicon photonics platform, dual-core SSCs were used to expand the same mode-field size of 3 µm as for the SSCs on SOAs. Using the FCB technology and the SSCs, an in-line optical amplification of 15 dB was achieved by in-line integrated SOAs with angled waveguides. The optical coupling losses were 7.7 dB, which included 5.1-dB excess losses by misalignment and a gap between InP-SOA and Si waveguides. A 4 × 4 Si switch with a hybrid-integrated 4-ch SOA array was fabricated, and achieved the first demonstration of a lossless Si switch.

Optical nonlinearity can be enhanced by the combination of highly nonlinear chalcogenide glass and photonic crystal waveguides (PCWs) providing strong optical confinement and slow-light effects. In a Ag-As(2)Se(3) chalcogenide PCW, the effective nonlinear parameter γeff reaches 6.3 × 10(4) W(-1)m(-1), which is 200 times larger than that in Si photonic wire waveguides. In this paper, we report the detailed design, fabrication process, and the linear and nonlinear characteristics of this waveguide at silica fiber communication wavelengths. We show that the waveguide exhibits negligible two-photon absorption, and also high-efficiency self-phase modulation and four-wave mixing, which are assisted by low-dispersion slow light.