An Si/III-V hybrid laser oscillating at a single wavelength was developed for use in a large-scale Si optical I/O chip. The laser had an InP-based reflective semiconductor optical amplifier (SOA) chip integrated with an Si wavelength-selection-mirror chip in a flip-chip configuration. A low coupling loss of 1.55 dB at the Si-SOA interface was accomplished by both mode-field-matching between Si-SOA waveguides and accurately controlling the bonding position. The fabricated Si hybrid laser exhibited a very low threshold current of 9.4 mA, a high output power of 15.0 mW, and a high wall-plug efficiency of 7.6% at 20 °C. Moreover, the device maintained a high output power of >10 mW up to 60°C due to the high thermal conductance between the SOA chip and Si substrate. The short cavity length of the flip-chip bonded laser expanded the longitudinal mode spacing. This resulted in temperature-stable single longitudinal mode lasing and a low RIN level of <-130 dB/Hz.

A precise flip-chip bonding (FCB) technology for indium phosphide semiconductor optical amplifiers (InP-SOAs) on a silicon photonics platform within less than ±1-µm alignment accuracy was developed. For efficient optical coupling and a relaxed alignment tolerance, the mode field on both the InP-SOAs and the Si waveguides was expanded by spot-size converters (SSCs). On the InP-SOAs, width-tapered SSCs were used to obtain an isotropic mode-field having an approximately a 3-µm diameter. On the silicon photonics platform, dual-core SSCs were used to expand the same mode-field size of 3 µm as for the SSCs on SOAs. Using the FCB technology and the SSCs, an in-line optical amplification of 15 dB was achieved by in-line integrated SOAs with angled waveguides. The optical coupling losses were 7.7 dB, which included 5.1-dB excess losses by misalignment and a gap between InP-SOA and Si waveguides. A 4 × 4 Si switch with a hybrid-integrated 4-ch SOA array was fabricated, and achieved the first demonstration of a lossless Si switch.

Slow-light Mach–Zehnder modulators on a silicon-on-insulator substrate are examined in this paper. The phase shifter on each arm consists of ten cascaded ring resonators in an all-pass filter configuration, and this acts as a slow-light structure. Fabricated devices show seven-fold enhancement in modulation efficiency compared with that of a conventional modulator; this enhancement was due to the slow light. Large signal modulations of 10 Gbps have been obtained using a driving signal of only 1 V peak-to-peak.

We experimentally demonstrate the lossless transmission of wavelength division multiplexing (WDM) signals through a silicon-photonics 4 × 4 switch with a flip-chip bonded 4-channel semiconductor optical amplifier (SOA). We first optimized the input power and gain of the SOA-integrated switch to obtain the optimum operation point in terms of the transmitted signal quality. We then performed simultaneous transmission of 8-ch, 32-Gbaud, SP 16-QAM WDM (800 Gb/s) signals through all the four paths of the switch. The effect of crosstalk on the switch was very small, and thus could not be observed. We also examined multistage (up to four stages) transmission of the signals with circulating configurations. We show that even for a 4-stage transmission, the bit error rate of the transmitted signal is below the 20% forward-error-correction limit. Finally, we discuss approaches to improve the optical signalto-noise ratio of the transmitted signals to enlarge the signal quality margin and increase the possible number of the cascading stages and/or WDM channels for wide applications.

A cascaded-ring-resonator-loaded Mach-Zehnder modulator (CRR-MZM) is presented in which a number of cascaded ring resonators (RRs) are loaded in the interferometer as phase modulators. The ability of the design to provide enhanced modulation efficiency at a wide optical bandwidth is demonstrated in comparison with a conventional single-RRtype modulator without an interferometer. The optimization of RRs for the CRR-MZM is investigated experimentally by measuring the transmission spectra in both intensity and group delay of RRs having various structural parameters. Using the optimized parameters, we fabricated a CRR-MZM with 10 cascaded RRs loaded on each arm of the interferometer on a silicon-on-insulate substrate. The RRs had pin-diodes along the waveguides, which were operated with forward bias voltage. Its modulation efficiency was enhanced by a factor of 4.4 at the expense of additional loss of less than 3.5 dB compared with a standard non-resonant MZM. 10 Gb/soperations of CRR-MZM were successfully demonstrated using preemphasized RF signals with amplitude of 1.5 V pp in a wavelength range of 2 nm.