Hybrid-Integration of SOA on Silicon Photonics Platform Based on Flip-Chip Bonding

Matsumoto, Takeshi; Kurahashi, T.; Konoike, Ryotaro; Suzuki, Keijiro; Tanizawa, Ken; Uetake, Ayahito; Takabayashi, Kazumasa; Ikeda, Kazuhiro; Kawashima, Hitoshi; Akiyama, Suguru; Sekiguchi, Satoshi

doi:10.1109/jlt.2018.2870128

Cited by 70 publications

(38 citation statements)

References 14 publications

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“…We note that 6 dB insertion loss is comparable with that of the silica PLC platform. For further loss reduction, integration with semiconductor optical amplifiers is an available option [35].…”

Section: Discussionmentioning

confidence: 99%

Low-Loss, Low-Crosstalk, and Large-Scale Optical Switch Based on Silicon Photonics

Suzuki

Konoike

Suda

et al. 2020

J. Lightwave Technol.

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We review the research progress of strictly nonblocking optical switches based on silicon photonics. We have developed a switch chip fabrication process based on a complementary metal-oxide-semiconductor pilot line and optical and electrical packaging technologies. We demonstrated all-paths transmission and switching of up to 32 input ports × 32 output ports with an average fiber-to-fiber insertion loss of 10.8 dB. Furthermore, we demonstrated an operating bandwidth wider than 100 nm for −30 dB crosstalk with double-Mach-Zehnder element switches in an 8 × 8 switch. For polarization-insensitive operation, we adopted a polarization diversity scheme and fabricated an 8 × 8 switch with fiber-based polarization-beam-splitters and two switch chips. The 8 × 8 switch exhibited a polarization-dependent loss of less than 0.5 dB. Moreover, an on-chip polarization diversity 8 × 8 switch integrated with polarization splitter rotators and two switch matrices on a single chip demonstrated a differential group delay less than 1 ps. Based on current technologies, we discuss the prospects for further port count expansion and remaining challenges for commercial deployment.

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Section: Discussionmentioning

confidence: 99%

Low-Loss, Low-Crosstalk, and Large-Scale Optical Switch Based on Silicon Photonics

Suzuki

Konoike

Suda

et al. 2020

J. Lightwave Technol.

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“…This integration technique combines the advantages of two established integration approaches: (heterogeneous) wafer bonding [28] and (hybrid) flip-chip integration [29]. Wafer bonding allows for high-throughput integration of active devices on the host substrate; however, the dense cointegration of different material stacks is not trivial.…”

Section: Microtransfer Printing Processmentioning

confidence: 99%

Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

Beeck

Haq

Elsinger

et al. 2020

Optica

103

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The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when combined with phase modulators and low-noise lasers, have the potential to improve the current state of the art of the most critical components in coherent communications, beam steering, and microwave photonics applications. However, the large refractive index difference between silicon nitride and common III-V gain materials in the telecom wavelength range hampers the integration of electrically pumped III-V semiconductor lasers on a silicon nitride waveguide chip. Here, we present an approach to overcome this refractive index mismatch by using an intermediate layer of hydrogenated amorphous silicon, followed by the microtransfer printing of a prefabricated III-V semiconductor optical amplifier. Following this approach, we demonstrate a heterogeneously integrated semiconductor optical amplifier on a silicon nitride waveguide circuit with up to 14 dB gain and a saturation power of 8 mW. We further demonstrate a heterogeneously integrated ring laser on a silicon nitride circuit operating around 1550 nm. This heterogeneous integration approach would not be limited to silicon-nitride-based platforms: it can be used advantageously for any waveguide platform with low-refractive-index waveguide materials such as lithium niobate.

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“…It should be noted that a quantum dot active layer is suitable for integration with silicon because it can be operated at high temperature [56]. A semiconductor optical amplifier (SOA) was flipchip bonded to compensate for the losses in silicon photonic switches [57,58].…”

Section: Active Component Integrationmentioning

confidence: 99%

Silicon photonics platforms for optical communication systems, outlook on future developments

Tsuda

2020

IEICE Electron. Express

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This paper reviews recent progress in silicon photonics and compares it with other optical device platforms. The key components for optical communication systems, including arrayed waveguide gratings, optical switches, modulators and optical functional devices fabricated on silicon photonics platforms are explained. The integration of III-V compounds, lithium niobate, polymers, phase change and other functional materials are necessary to strengthen silicon photonics platforms. These are also reviewed, and the feasibilities are discussed. Finally, I express my personal view as to the best research direction for silicon photonics.

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Hybrid-Integration of SOA on Silicon Photonics Platform Based on Flip-Chip Bonding

Cited by 70 publications

References 14 publications

Low-Loss, Low-Crosstalk, and Large-Scale Optical Switch Based on Silicon Photonics

Low-Loss, Low-Crosstalk, and Large-Scale Optical Switch Based on Silicon Photonics

Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

Silicon photonics platforms for optical communication systems, outlook on future developments

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