Abstract:This paper reviews recent progress in silicon photonics and compares it with other optical device platforms. The key components for optical communication systems, including arrayed waveguide gratings, optical switches, modulators and optical functional devices fabricated on silicon photonics platforms are explained. The integration of III-V compounds, lithium niobate, polymers, phase change and other functional materials are necessary to strengthen silicon photonics platforms. These are also reviewed, and the … Show more
“…Si photonics has been developed and is expected to play an important role in realizing optical interconnections in PICs, where optical switches/modulators based on the electrooptical effect, the magneto-optical (MO) effect, and the thermo-optical (TO) effect have been reported. [1][2][3][4][5][6][7][8] Si waveguide optical switches based on the TO effect without electrical signals are very important because they do not need complicated electrical wiring and electrodes on the optical waveguides. Photothermal switches using heavily doped Si were reported for all-optical switching without electrical signals.…”
We report the design and fabrication of Si plasmonic waveguide local heaters with ring resonators. Quantification of the local temperature rise is reported through analysis based on the thermo-optic(TO) effect, and the heaters can be miniaturized by introducing a stronger interaction between the propagating light and matter. The resonance wavelength in the waveguide heater was shifted toward a longer wavelength by injecting transverse magnetic mode light, and the shift was proportional to the light intensity. The local temperature rise was 288 K upon inputting 6.3 mW light, and the photothermal conversion efficiency was as high as 46.1 K/mW in a Si plasmonic waveguide loaded with 30 nm-thick and 1 μm-long Co thin films, showing improved characteristics compared with previous devices. Investigation toward achieving a higher efficiency is discussed based on simulation and experimental results, for realizing photothermal waveguide heaters with smaller size, and lower input power for various applications.
“…Si photonics has been developed and is expected to play an important role in realizing optical interconnections in PICs, where optical switches/modulators based on the electrooptical effect, the magneto-optical (MO) effect, and the thermo-optical (TO) effect have been reported. [1][2][3][4][5][6][7][8] Si waveguide optical switches based on the TO effect without electrical signals are very important because they do not need complicated electrical wiring and electrodes on the optical waveguides. Photothermal switches using heavily doped Si were reported for all-optical switching without electrical signals.…”
We report the design and fabrication of Si plasmonic waveguide local heaters with ring resonators. Quantification of the local temperature rise is reported through analysis based on the thermo-optic(TO) effect, and the heaters can be miniaturized by introducing a stronger interaction between the propagating light and matter. The resonance wavelength in the waveguide heater was shifted toward a longer wavelength by injecting transverse magnetic mode light, and the shift was proportional to the light intensity. The local temperature rise was 288 K upon inputting 6.3 mW light, and the photothermal conversion efficiency was as high as 46.1 K/mW in a Si plasmonic waveguide loaded with 30 nm-thick and 1 μm-long Co thin films, showing improved characteristics compared with previous devices. Investigation toward achieving a higher efficiency is discussed based on simulation and experimental results, for realizing photothermal waveguide heaters with smaller size, and lower input power for various applications.
“…A silicon Mach-Zehnder Interferometer (MZI) switch using the thermo-optic effect can switch the light within approximately 30 μs, which is faster than silica WSSs and free-space optic WSSs [12][13] [14]. However, silicon AWGs are difficult to put into practical use because of high crosstalk due to phase errors caused by manufacturing errors [15] [16]. Free-space optics type WSSs use MEMS mirrors [17] [18][19] [20] or LCOS [21][22][23] [24] for switching.…”
A monolithic wavelength selective switch (WSS) using a silicon waveguide was fabricated and its characteristics were measured. The crosstalk of the silicon arrayed-waveguide grating (AWG), which is a drawback of the silicon waveguide type WSS, is reduced by introducing a Bragg grating filter (BGF), which can realize a waveguide type WSS with both fast switching and low crosstalk performance. The extinction ratio of the BGF was approximately 20 dB with a 3-dB bandwidth of 0.6 nm. The AWG had an average loss of 9.5 dB with a large second peak crosstalk. Switching experiments showed that the total loss averaged 20.5 dB, the crosstalk averaged -13.9 dB, and that switching responses were 13 μs for both the rise and fall.
“…Among them, silicon arrayed‐waveguide gratings (AWGs) are crucial as a key element for high‐capacity wavelength‐division‐multiplexing (WDM) systems. [ 5,6 ] Different from multi‐channel WDM filters based on cascaded microrings, [ 7 ] AWGs feature intrinsically uniform channel spacing even without additional thermo‐optic tuning. [ 8 ] Since silicon nanophotonic waveguides have an ultra‐high index‐contrast, it is possible to shrink the AWG footprint greatly from several cm 2 to sub‐mm 2 or even less.…”
A silicon arrayed‐waveguide grating (AWG) with 1.6‐nm channel spacing is proposed and realized with high performances for dense wavelength‐division (de)multiplexing systems. For the present AWG, the arrayed waveguides are broadened uniformly to be far beyond the singlemode regime, so that random phase errors and propagation loss are minimized even without any additional requirement for the fabrication process. Particularly, Euler‐bends are introduced for the arrayed waveguides to shrink the device footprint and suppress any excitation of higher‐order modes. As an example, a 16 × 16 AWG (de)multiplexer is realized with a compact footprint of 600 × 800 µm2 by using single‐etched 220‐nm‐thick silicon photonic waveguides. When using the fabricated AWG to demultiplex the channels launched from the central input port, the excess loss and the adjacent‐channel crosstalk of the central output port are ≈2.2 and ≈−31.7 dB, respectively. Such an AWG is one of the best among silicon implementations.
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