A 1 V Peak-to-Peak Driven 10-Gbps Slow-Light Silicon Mach–Zehnder Modulator Using Cascaded Ring Resonators

Akiyama, Suguru; Kurahashi, T.; Baba, Toshihide; Hatori, Nobuaki; Usuki, Tatsuya; Yamamoto, Tsuyoshi

doi:10.1143/apex.3.072202

Cited by 28 publications

(28 citation statements)

References 18 publications

(67 reference statements)

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“…When their structures are modified and optimized, they exhibit flat transmission and n g spectra, as shown in section 5. Thus far, all pass cavity arrays [5] and photonic crystal waveguides [6, 7], have been applied actually to phase shifters of Si MZ modulators. In the following, we limit the discussion to photonic crystal MZ modulators as photonic crystal waveguides have larger Δn .…”

Section: Slow-light Modulatormentioning

confidence: 99%

Slow-light Mach–Zehnder modulators based on Si photonic crystals

Baba

Nguyen

Yazawa

et al. 2014

Science and Technology of Advanced Materials

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Mach–Zehnder optical modulators are the key devices for high-speed electrical-to-optical conversion in Si photonics. Si rib waveguides with a p–n diode structure operated in the carrier depletion mode have mainly been developed as their phase shifters. Their length is usually longer than millimeters due to the limited change in the refractive index due to the carrier depletion in a Si p–n diode. This length is shorter than commercial LiNbO3 modulators, but still much shorter devices are desired for large-scale integration and for simplifying the high-speed RF modulation. A promising solution is to use slow light in photonic crystal waveguides, which enhances the modulation efficiency in proportion to the group-velocity refractive index ng. In particular, dispersion-engineered slow light allows more than five-fold enhancement, maintaining a wide working spectrum as well as large temperature tolerance. The devices with a phase shifter length of around 100 μm are fabricated by a standard process compatible with complementary metal-oxide semiconductors. The operation at 10 Gbps and higher speeds are obtained in the wavelength range of 16.9 nm and temperature range of 105 K.

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Section: Slow-light Modulatormentioning

confidence: 99%

Slow-light Mach–Zehnder modulators based on Si photonic crystals

Baba

Nguyen

Yazawa

et al. 2014

Science and Technology of Advanced Materials

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“…30) Owing to the combination of an MZI and the enhanced phase change in an MRR, compact and low-voltage optical modulators have been developed. [31][32][33][34][35] If an MRR-MZI is applied to biosensing, MRR-based biosensors with higher sensitivity than conventional MRR sensors can be realized.…”

Section: Introductionmentioning

confidence: 99%

Highly sensitive optical biosensor based on silicon-microring-resonator-loaded Mach–Zehnder interferometer

Yoshida

Ishihara

Arakawa

et al. 2017

Jpn. J. Appl. Phys.

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We propose and demonstrate a novel biosensor based on a silicon-single-microring-resonator-loaded Mach-Zehnder interferometer (MRR-MZI), and discuss the design of the sensor theoretically. Owing to the combination of an MZI and the enhanced phase change in a microring resonator (MRR), high sensitivity is expected to be realized. The designed MRR-MZI sensor is fabricated using a CMOS-compatible process, and its sensing characteristics are measured using ethanol solutions with a concentration of less than 3 wt % and avidin solutions. The sensitivity of the MRR-MZI to changes in the environmental refractive index is increased by approximately 50 times compared with that of a simple MRR. In addition, avidin solution with a concentration as low as 20 pM was successfully detected.

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“…These modulators need electric capacitors, which can dynamically store and release electrons and/or holes at the waveguide core. Thus, far, forward [20][21][22][23][24][25][26] and reverse-biased [20,[27][28][29][30][31][32][33][34] pn diodes, and MOS capacitors operated in accumulation mode [35][36][37][38] have been implemented, and such devices have all demonstrated high-speed operations above 40 Gb/s with reasonably small driving voltages and footprints. Modulators that are superior in terms of fundamental performance should be chosen to meet the requirements of continuously increasing data rates of transceivers.…”

Section: Introductionmentioning

confidence: 99%

High-speed and efficient silicon modulator based on forward-biased pin diodes

Akiyama

Usuki

2014

Front. Phys.

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Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, α · V π L, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of V π L on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an α · V π L of 9.5 dB·V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This α · V π L was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

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A 1 V Peak-to-Peak Driven 10-Gbps Slow-Light Silicon Mach–Zehnder Modulator Using Cascaded Ring Resonators

Cited by 28 publications

References 18 publications

Slow-light Mach–Zehnder modulators based on Si photonic crystals

Slow-light Mach–Zehnder modulators based on Si photonic crystals

Highly sensitive optical biosensor based on silicon-microring-resonator-loaded Mach–Zehnder interferometer

High-speed and efficient silicon modulator based on forward-biased pin diodes

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