45-nm CMOS devices with a steep halo using a highramprate spike annealing (HRR-SA) are demonstrated with drive currents of 697 and 292 pA/pm for an off current less than 10 nA/pm at 1.2 V. For an off current less than 300 nA/pm, 33-nm pMOSFETs have a high drive current of 403 pA/pm at 1.2 V. In order to fabricate a steeper halo than these MOSFETs, a source/drain extension (SDE) activation using the HRR-SA process was performed after a deep source/drain (S/D) formation. By using this sequence defined as a reverse-order S/D formation, 24-nm nMOSFETs are achieved with a high drive current of 796 pA/pm for an off current less than 300 nA/pm at 1.2 V.
For furure highdensity contactless-NOR-type flash EEPROMs, a new memory cell with self-alipxl trench transistor & isolation structure has been propom$ and its feasibility was demonstratedThe short channel e f f i was suppressed markedly down to the f A m size (F) of 0.14 pn with the tunnel oxide thickness of 9 nm, and excellent endurance performance (>lo5 Fowler-Nordheim writelerase cycles) of the memory cell with the am of 0.16 pn2 (8F2, F4.14 pn) was realized.
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