For furure highdensity contactless-NOR-type flash EEPROMs, a new memory cell with self-alipxl trench transistor & isolation structure has been propom$ and its feasibility was demonstratedThe short channel e f f i was suppressed markedly down to the f A m size (F) of 0.14 pn with the tunnel oxide thickness of 9 nm, and excellent endurance performance (>lo5 Fowler-Nordheim writelerase cycles) of the memory cell with the am of 0.16 pn2 (8F2, F4.14 pn) was realized.
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