A flash EEPROM cell with self-aligned trench transistor and isolation structure

Nakagawa, K.; Yoshida, K.; Masuda, S.; Yoshino, Akira; Sakai, I.

doi:10.1109/vlsit.2000.852795

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To solve this misalignment effect, a self-aligned contact (SAC) method is essential. 4) However, since the SAC method in a NOR flash cell suffers from a high bias above 4 V in a bit line for hot carrier injection programming, it is very severe project. To avoid gate to contact leakage in SAC, an enlarged metal contact (EMC) scheme is preferred.…”

Section: Control Of Misalignment For Gate To Contactmentioning

confidence: 99%

Investigation for Narrow Cell Threshold Voltage Distribution in NOR Flash Device

Song¹,

Lee²,

Lee³

et al. 2007

jjap

View full text Add to dashboard Cite

Resonant and nonresonant diffusion of electrons has been studied in a toroidal magnetic field with pulsed injection of electrons.We have experimental evidence of the theoretical predictions of B l 3/2 dependence of the diffusion coefficients in strong perturbation fields. We have observed the transition from Bla to B 1 3 / 2 behavior for Bl/Bo < 1 per cent where BL is the perturbing and Bo the uniform magnetic field. Theoretical models based on unperturbed orbit calculations are shown to be invalid for surprisingly small valuesWe have conducted measurements of nonresonant diffusion applicable to dissociation experiments in nonadiabatic traps. We find that the diffusion coefficient depends strongly on how nearly resonant the electron is with the perturbed field. For a 50 per cent change in effective perturbation frequency, the diffusion coefficient changes by a factor 1000.Our results can be scaled to the problem of nonadiabatic trapping and dissociation of molecular ions. We infer the resulting nonresonant protons would have a lifetime against nonadiabatic scattering 10,OOQ times longer than the parent molecular ioos.

show abstract

Section: Control Of Misalignment For Gate To Contactmentioning

confidence: 99%