Articles you may be interested inIon-surface interactions in low temperature silicon epitaxy by remote plasma enhanced chemical-vapor deposition J.Noncontact minority carrier lifetime measurement of Si and SiGe epilayers prepared by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition Polycrystalline TiN films containing less than 1 at. % of Cl contamination were formed from TiCl 4 at a low temperature ͑200°C͒ condition on a Si substrate by pulsed plasma chemical vapor deposition. The Cl suppression at low temperature was realized by a two-step process, TiCl 4 decomposition and hydrogen reduction. The main objective for reducing Cl in the film was to establish a sufficient reduction period to free TiCl x radicals in the gas phase. The length of the reduction period was affected by the radio frequency power, which decided the rate of TiCl 4 decomposition and hydrogen reduction.
In this paper, we demonstrate a new method of improving the defect controllability of grainy metal layers, for example, Hot-Al-Cu wiring, by enhancing the practical sensitivity of in-line inspectors. The problem in increasing practical sensitivity is the nuisance counts caused by grain boundaries, which do not cause electrical failures.We propose a method of decreasing the signal from the grain boundaries. On the grayscale images taken by pattern matching inspectors, grain boundaries are observed as gray on Hot-Al-Cu wiring, which is observed as white. If the illumination brightness is increased, the gray level of the grain boundaries becomes higher and saturates at the upper limit of grayscale, i.e., white. On the other hand, the gray level of the wiring stays white. Thus the signal, the grayscale difference between the grain boundaires and the wiring, can be decreased to almost zero. We call this phenomenon the "saturation effect."Our experimental results prove that the saturation effect due to illumination brightness optimization successfully cancels the nuisance counts caused by grain boundaries. The practical sensitivity limit is enhanced from 0.8 to 0.4 m. This solution will greatly improve the defect controllability of grainy metal layers.Index Terms-Grayscale, in-line inspection, pattern matching inspector, patterned inspection, semiconductor manufacturing.
Precursors for Silicon nitride films prepared by mixing SiH2Cl2 with NH3 were investigated by in situ Fourier-transform infrared spectroscopy (FT-IR) and mass spectrometry. The FT-IR spectral analysis results indicated that the Cl was removed from SiH2Cl2 by mixing SiH2Cl2 with NH3 at room temperature (R.T.). The analysis results also indicated the existence of radicals which had the chemical bond Si–N. The mass spectral analysis results indicated the existence of the radicals with the mass number of 45–47. From these results, it was concluded that the precursors of SiNH
x
for SiN films were formed by mixing SiH2Cl2 with NH3.
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