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Precursors for Silicon nitride films prepared by mixing SiH2Cl2 with NH3 were investigated by in situ Fourier-transform infrared spectroscopy (FT-IR) and mass spectrometry. The FT-IR spectral analysis results indicated that the Cl was removed from SiH2Cl2 by mixing SiH2Cl2 with NH3 at room temperature (R.T.). The analysis results also indicated the existence of radicals which had the chemical bond Si–N. The mass spectral analysis results indicated the existence of the radicals with the mass number of 45–47. From these results, it was concluded that the precursors of SiNH
x
for SiN films were formed by mixing SiH2Cl2 with NH3.
Arsenic-implanted self-aligned Al-gate MOSFETs have been successfully fabricated by employing ultra-clean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of the high-energy-beam-induced metal sputter contamination have enabled us to form low-leakage pn junctions by fumace arurealing at a temperature as low as 450"C. The fabricated Al-gate MOSFETs have exhibited good electrical characteristics, thus demonstratiDg a large poteDtial for application to realizing ultra-high-speed integrated circuits. 1. Introducfion and drain junctions self-aligned to the aluminum gate,
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