Formation of TiN films with low Cl concentration by pulsed plasma chemical vapor deposition

Abstract

Articles you may be interested inIon-surface interactions in low temperature silicon epitaxy by remote plasma enhanced chemical-vapor deposition J.Noncontact minority carrier lifetime measurement of Si and SiGe epilayers prepared by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition Polycrystalline TiN films containing less than 1 at. % of Cl contamination were formed from TiCl 4 at a low temperature ͑200°C͒ condition on a Si substrate by pulsed plasma chemical vapor deposition. The Cl suppression at low temperature was realized by a two-step process, TiCl 4 decomposition and hydrogen reduction. The main objective for reducing Cl in the film was to establish a sufficient reduction period to free TiCl x radicals in the gas phase. The length of the reduction period was affected by the radio frequency power, which decided the rate of TiCl 4 decomposition and hydrogen reduction.

Volatile β-Ketoiminato- and β-Diketiminato-Based Zirconium Complexes as Potential MOCVD Precursors

“…Several groups approached the preparation of group 4 transition metal nitrides, in particular with titanium and zirconium. TiN and ZrN are important for several applications: hard protective coatings; − diffusion barrier in integrated circuit devices; , gate materials; thin-film thermistors; Josephson junctions; decorative optical coatings …”

Epitaxial growth of TiN films by N-implantation into evaporated Ti films

“…[1][2][3][4][5] These studies have suggested that epitaxial TiN films have superior effectiveness as corrosion-resistant coatings and diffusion barriers to that of polycrystalline TiN films. 1 Thus, properties of polycrystalline TiN have been studied in connection with the atomic concentration ratio ͑N/Ti͒ and microstructures in many previous papers.…”

Quantitative Analysis on the Growth of Negative Ions in Pulse-Modulated SiH4 Plasmas

“…In general, increasing the deposition rate by just raising the power or reactor pressure in the conventional continuous-wave plasma discharge results in the generation of particles in the range from nanometers to microns, followed by the particle contamination to deteriorate the performance of microelectronic devices. [1][2][3] The pulse-modulated plasma discharges have been considered as a relatively simple method to control the deposition characteristics of thin films, [4][5][6][7][8][9][10][11][12] and several studies have reported that various films of amorphous silicon, 1-2,13 polycrystalline silicon, 1,2 titanium nitride, 14 amorphous hydrogenated silicon carbide, 15 diamond, 16 silicon dioxide, 17 and fluorocarbon [9][10][11][12] were deposited by using the pulse-modulated plasmas. Timmons and colleagues [10][11][12] synthesized the fluorocarbon thin film of low dielectric constant from pentafluorostyrene monomer as the next-generation materials for integrated circuits by adjusting the duty cycles in the pulsedplasma processes.…”

“…The pulse-modulated plasma discharges have been considered as a relatively simple method to control the deposition characteristics of thin films, − and several studies have reported that various films of amorphous silicon, −, polycrystalline silicon, , titanium nitride, amorphous hydrogenated silicon carbide, diamond, silicon dioxide, and fluorocarbon 9-12 were deposited by using the pulse-modulated plasmas. Timmons and colleagues 10-12 synthesized the fluorocarbon thin film of low dielectric constant from pentafluorostyrene monomer as the next-generation materials for integrated circuits by adjusting the duty cycles in the pulsed-plasma processes.…”