A new technique to produce a strongly ionized plasma from aluminum metal is achieved by use of the plasma-assisted arc in a tokamak discharge with low temperature (\lesssim10 eV), high electron density (\gtrsim1012 cm-3), and low gas pressure (10-5∼10-4 Torr). On arcing, the spectral lines of AlI, AlII and AlIII have been observed. Using the comparison spectroscopic method with no need of absolute measurement of spectral line intensity, we obtained the result that doubly ionized aluminum ions are dominant, and the density is estimated to be about 1011 cm-3. The aluminum plasma thus produced is useful and has potential for plasma processing, such as thin-film formation of AlN.
Articles you may be interested inIon-surface interactions in low temperature silicon epitaxy by remote plasma enhanced chemical-vapor deposition J.Noncontact minority carrier lifetime measurement of Si and SiGe epilayers prepared by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition Polycrystalline TiN films containing less than 1 at. % of Cl contamination were formed from TiCl 4 at a low temperature ͑200°C͒ condition on a Si substrate by pulsed plasma chemical vapor deposition. The Cl suppression at low temperature was realized by a two-step process, TiCl 4 decomposition and hydrogen reduction. The main objective for reducing Cl in the film was to establish a sufficient reduction period to free TiCl x radicals in the gas phase. The length of the reduction period was affected by the radio frequency power, which decided the rate of TiCl 4 decomposition and hydrogen reduction.
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