A self-complementary metasurface is presented for application in multiband terahertz filters. The unit cell structures of the self-complementary metasurface consist of a combination of an ordinary Jerusalem cross and its complementary counterpart that resonates in the THz regime. The columnar repetition of ordinary and complementary resonator structures enables complementary spectral responses for incident waves with mutually orthogonal linear polarizations. The operating principles of the selfcomplementary metamaterial with the interaction between the juxtaposed ordinary and complementary Jerusalem crosses are explained using an equivalent circuit method and are confirmed with a full-wave electromagnetic simulation. The designed self-complementary metasurface functions as a selective bandstop filter (BSF) or bandpass filter (BPF) depending on the polarization states of the incident wave. The fabricated metasurface exhibits high polarization purity, exemplified by a polarization extinction ratio as high as 24 dB. The transmittance phases of the two orthogonally polarized waves have phase differences between-73° and 83° within a broad frequency range.
Next-generation wireless communication such as sixth-generation (6G) and beyond is expected to require high-frequency, multifunctionality, and power-efficiency systems. A III−V compound semiconductor is a promising technology for high-frequency applications, and a Si complementary metal-oxide-semiconductor (CMOS) is the never-beaten technology for highly integrated digital circuits. To harness the advantages of these two technologies, monolithic integration of III−V and Si electronics is beneficial, so that there have been everlasting efforts to accomplish the monolithic integration. Considering that the on horizon 6G wireless communication requires faster and more energy-efficient system-on-chip technologies, it is imperative to realize a radio frequency (RF) system in which III−V technology and Si CMOS technology are integrated at a device level.Here we report heterogeneous and monolithic three-dimensional (3D) analog/ RF-digital mixed-signal integrated circuits that contain two types of InGaAs high-electron-mobility transistors (HEMTs) designed for high f T and f MAX in the top and Si CMOS mixed-signal circuits consisting of an analog-to-digital converter and digital-to-analog converter in the bottom. A high unity current gain cutoff frequency of 448 GHz and unity power gain cutoff frequency of 742 GHz have been achieved by the f T oriented and f MAX oriented InGaAs HEMTs, respectively, without being affected by mixed-signal interference. At the same time, the bottom Si CMOS circuits provide valid signals without any performance degradation by the integration process.
BackgroundDelirium is characterized by acute brain dysfunction. Although delirium significantly affects the quality of life of patients with brain metastases, little is known about delirium in patients who undergo craniotomy for brain metastases. This study aimed to identify the factors influencing the occurrence of delirium following craniotomy for brain metastases and determine its impact on patient prognosis.MethodA total of 153 patients who underwent craniotomy for brain metastases between March 2013 and December 2020 were evaluated for clinical and radiological factors related to the occurrence of delirium. Statistical analysis was conducted by dividing the patients into two groups based on the presence of delirium, and statistical significance was confirmed by adjusting the clinical characteristics of the patients with brain metastases using propensity score matching (PSM). The effect of delirium on patient survival was subsequently evaluated using Kaplan–Meier analysis.ResultsOf 153 patients, 14 (9.2%) had delirium. Age (P = 0.002), sex (P = 0.007), and presence of postoperative hematoma (P = 0.001) were significantly different between the delirium and non-delirium groups. When the matched patients (14 patients in each group) were compared using PSM, postoperative hematoma showed a statistically significant difference (P = 0.036) between the delirium and non-delirium groups. Kaplan–Meier survival analysis revealed that the delirium group had poorer prognosis (log-rank score of 0.0032) than the non-delirium group.ConclusionIn addition to the previously identified factors, postoperative hematoma was identified as a strong predictor of postoperative delirium. Also, the negative impact of delirium on patient prognosis including low survival rate was confirmed.
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