Quaternary In0.05Al0.70Ga0.25N/GaN HEMTs With On-Resistance of $0.97\ \Omega\cdot \text{mm}$

Hwang, Ji Hyun; Jang, Mi; Park, Juyeong; Jang, Jae‐Hyung

doi:10.1109/iciprm.2019.8819010

2019 Compound Semiconductor Week (CSW) 2019

DOI: 10.1109/iciprm.2019.8819010

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Quaternary In_0.05Al_0.70Ga_0.25N/GaN HEMTs With On-Resistance of $0.97\ \Omega\cdot \text{mm}$

Ji Hyun Hwang

Mi Jang

Juyeong Park

et al.

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Quaternary In_0.05Al_0.70Ga_0.25N/GaN HEMTs With On-Resistance of $0.97\ \Omega\cdot \text{mm}$

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