Effects of periodic patterns in recessed ohmic contacts on InAlGaN/GaN heterostructures

Jang, Mi; Park, Juyeong; Hwang, Ji Hyun; Mun, Ha Jin; Cha, Suhyeong; Hong, Sungmin; Jang, Jae‐Hyung

doi:10.1016/j.sse.2020.107917

Cited by 2 publications

(3 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“… Benchmark of the lowest contact resistance in this study with published literature [ 20 , 21 , 22 , 23 , 25 , 26 , 27 ]. …”

Section: Figurementioning

confidence: 99%

“…After extrapolating the H21 (dB) to frequency (log scale) curves and MSG/MAG to frequency (log scale) curves with the slope of −20 dB/decade, the cut-off frequency (f T ) and maximum oscillation frequency (f max ) values of the OEP devices were obtained, as shown in Figure 7a,b. [20,21,22,23,25,26,27].…”

Section: Small Signal Performancementioning

confidence: 99%

“…Solutions have been proposed to reduce the parasitic influences of GaN-based HEMTs through barrier layer recessing, ohmic regrowth, and n-type doping to lower the source and drain resistances ( R s and R d ) for direct current (DC) characteristic improvements [ 18 , 19 ]. In advance, researchers have reported simulated and experimental results regarding contact resistivity improvements using several ohmic recessing patterns to increase the current paths and device saturation current density [ 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Lee,

Chuang,

Gamiz

et al. 2023

Micromachines

View full text Add to dashboard Cite

In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported. The fabricated AlGaN/GaN HEMTs with OEP structures were used to reduce the source and drain resistances (Rs and Rd) for RF performance improvements. Within the proposed study using 1 μm hole, 3 μm hole, 1 μm line, and 3 μm line OEP HEMTs with 2 × 25 μm gate widths, the small signal performance, large signal performance, and minimum noise figure (NFmin) with optimized values were measured for 1 μm line OEP HEMTs. The cut-off frequency (fT) and maximum oscillation frequency (fmax) value of the 1 μm line OEP device exhibited optimized values of 36.4 GHz and 158.29 GHz, respectively. The load–pull results show that the 1 μm line OEP HEMTs exhibited an optimized maximum output power density (Pout, max) of 1.94 W/mm at 28 GHz. The 1 μm line OEP HEMTs also exhibited an optimized NFmin of 1.75 dB at 28 GHz. The increase in the contact area between the ohmic metal and the AlGaN barrier layer was used to reduce the contact resistance of the OEP HEMTs, and the results show that the 1 μm line OEP HEMT could be fabricated, producing the best improvement in RF performance for Ka-band applications.

show abstract

“… Benchmark of the lowest contact resistance in this study with published literature [ 20 , 21 , 22 , 23 , 25 , 26 , 27 ]. …”

Section: Figurementioning

confidence: 99%