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The mechanism for low-temperature photoluminescence (PL) emissions in GaNAs epilayers and GaAs/GaNxAs1−x quantum well (QW) structures grown by molecular-beam epitaxy is studied in detail, employing PL, PL excitation, and time-resolved PL spectroscopies. It is shown that even though quantum confinement causes a strong blueshift of the GaNAs PL emission, its major characteristic properties are identical in both QW structures and epilayers. Based on the analysis of the PL line shape, its dependence on the excitation power and measurement temperature, as well as transient data, the PL emission is concluded to be caused by a recombination of excitons trapped by potential fluctuations in GaNAs.

Annealing behavior between room temperature and 2000°C of deep level defects in electron-irradiated n -type 4H silicon carbide J. Appl. Phys. 98, 043518 (2005); 10.1063/1.2009816 Deep levels created by low energy electron irradiation in 4 H -SiC A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H-SiCDeep level defects in electron-irradiated 4H SiC epitaxial layers grown by chemical vapor deposition were studied using deep level transient spectroscopy. The measurements performed on electron-irradiated p ϩ n junctions in the temperature range 100-750 K revealed several electron traps and one hole trap with thermal ionization energies ranging from 0.35 to 1.65 eV. Most of these defects were already observed at a dose of irradiation as low as Ϸ 5ϫ10 13 cm Ϫ2 . Dose dependence and annealing behavior of the defects were investigated. For two of these electron traps, the electron capture cross section was measured. From the temperature dependence studies, the capture cross section of these two defects are shown to be temperature independent.

The optical signatures of Mg-related acceptors in GaN have been revisited in samples specifically grown on bulk GaN templates, to avoid strain broadening of the optical spectra. Bound-exciton spectra can be studied in these samples for Mg concentrations up to [Mg] approximately 2 x 10(19) cm(-3). Contrary to previous work it is found that instabilities in the photoluminescence spectra are not due to unstable shallow donors, but to unstable Mg-related acceptors. Our data show that there are two Mg-related acceptors simultaneously present: the regular (stable) substitutional Mg acceptor, and a complex acceptor which is unstable in p-GaN.

We have studied intrinsic and impurity related defects in silicon carbide (SiC) epilayers grown with fast epitaxy using chemical vapor deposition in a vertical hot-wall reactor. Using capacitance transient techniques, we have detected low concentrations of electron traps (denoted as Z1/2, EH6/7 and titanium) and hole traps (denoted as HS1 and shallow boron) in the n-type 4H–SiC epilayers. The concentration of intrinsic defects (Z1/2, EH6/7, and HS1 centers) increases with increasing growth temperature. The incorporation of shallow boron (B) decreases at higher growth temperatures, whereas the titanium (Ti) concentration is not sensitive to the growth temperature. The concentration of shallow B and Ti increases with increasing C/Si ratio. The concentration of the EH6/7 and the HS1 centers however, decreases with increasing C/Si ratio. We have also tested graphite susceptors with TaC or SiC coating and observed that the purity of the susceptor material plays a critical role in reducing the background impurity incorporation. The correlation with the carrier lifetime of these epilayers indicates that the EH6/7 and the Z1/2 centers may be the lifetime limiting defects in the investigated epilayers.

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The electrical degradation of 4H–SiC PiN diodes has recently attracted much interest and is a critical material problem for high power applications. The degradation is caused by stacking faults observed as an increased forward voltage drop after forward injection operation. In this article we have combined electrical, optical, and structural techniques to study the formation and growth of the stacking faults causing degradation. We will show three different sources causing two different types of stacking fault properties.