Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

Bergman, J. P.; Lendenmann, H.; Nilsson, Per Åke; Lindefelt, Ulf; Skytt, P.

doi:10.4028/www.scientific.net/msf.353-356.299

Cited by 407 publications

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“…The number for each SF indicates how many times it appeared in the TEM measurements. Similarly, from HR-TEM images, Liu et al found the SFs in 6H-SiC with the faulted sequences of (3,2), (3,4), (3,5), (3,6), and (3,2,2,2), 13 which are also including in Table I. This indicates that all the SFs we observed are not specific in this 6H-SiC sample.…”

Section: B Hr-tem Images Of Stacking Faultssupporting

confidence: 54%

“…5. Apart from SFs (3,4) and (4,4), several stacking faults in sequences of (3,5), (3,6), (3,7) can also be observed. At the bottom of Fig.…”

Section: B Hr-tem Images Of Stacking Faultsmentioning

confidence: 99%

“…From the energy of the momentum-conservative phonons, they were associated with excitonic energy gaps at E gx1 ¼ 2.837 eV, E gx2 ¼ 2.689 eV, E gx3 ¼ 2.600 eV and E gx4 ¼ 2.525 eV. In the same part where low temperature photoluminescence was performed, high resolution transmission electron microscopy measurements revealed stacking faults which, in terms of the Zhdanov notation, could be recognized as SFs (3, 4), (3,5), (3, 6), (3, 7), (3, 9), (3, 11), (3, 16) and (3, 22), respectively. Among them stacking fault (3, 4) was the most common one, but a faulted region with a (4, 4) 8H-SiC like sequence was also found.…”

mentioning

confidence: 96%

“…For instance, SFs induced in bipolar devices under a strong electrical stress increase the series resistance of diodes and result in permanent device degradation. 5 For a long time, this problem has slowed down the development of SiC bipolar devices. 5,6 Different types of SFs have been theoretically investigated to increase understanding of their presence and formation.…”

Section: Introductionmentioning

confidence: 99%

“…5 For a long time, this problem has slowed down the development of SiC bipolar devices. 5,6 Different types of SFs have been theoretically investigated to increase understanding of their presence and formation. In 4H-SiC, focusing on pure Shockley SFs (SSFs) introduced by the motion of partial dislocations, Iwata et al investigated the corresponding energy levels.…”

Section: Introductionmentioning

confidence: 99%

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Shockley-Frank stacking faults in 6H-SiC

Sun

Robert

Andreadou

et al. 2012

Journal of Applied Physics

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Effect of stacking fault and temperature on deformation behaviors of nanocrystalline Mg J. Appl. Phys. 112, 054322 (2012) Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers Appl. Phys. Lett. 101, 112102 (2012) Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN J. Appl. Phys. 112, 053512 (2012) Ruddlesden-Popper faults in LaNiO3/LaAlO3 superlattices J. Appl. Phys. 112, 013509 (2012) Optical and structural studies of homoepitaxially grown m-plane GaN Appl. Phys. Lett. 100, 172108 (2012) Additional information on J. Appl. Phys. We report on Shockley-Frank stacking faults (SFs) identified in 6H-SiC by a combination of low temperature photoluminescence (LTPL) and high resolution transmission electron microscopy (TEM). In the faulted area, stacking faults manifested as large photoluminescence emissions bands located in between the 6H-SiC signal (at $2.99 eV) and the 3C-SiC bulk-like one (at $2.39 eV). Each of the stacking fault related emission band had a four-fold structure coming from the TA, LA, TO, and LO phonon modes of 3C-SiC. Up to four different faults, with four different thickness of the 3C-SiC lamella, could be observed simultaneously within the extent of the laser excitation spot. From the energy of the momentum-conservative phonons, they were associated with excitonic energy gaps at E gx1 ¼ 2.837 eV, E gx2 ¼ 2.689 eV, E gx3 ¼ 2.600 eV and E gx4 ¼ 2.525 eV. In the same part where low temperature photoluminescence was performed, high resolution transmission electron microscopy measurements revealed stacking faults which, in terms of the Zhdanov notation, could be recognized as SFs (3, 4), (3,5), (3, 6), (3, 7), (3, 9), (3, 11), (3, 16) and (3, 22), respectively. Among them stacking fault (3, 4) was the most common one, but a faulted region with a (4, 4) 8H-SiC like sequence was also found. Using a type II 6H/3C/6H quantum-well model and comparing with experimental results, we find that the photoluminescence emissions with excitonic band gaps at 2.837 eV (E gx1 ), 2.689 eV (E gx2 ), 2.600 eV (E gx3 ) and 2.525 eV (E gx4 ) come from SFs (3, 4), (3, 5), (3, 6) and (3, 7), respectively. A possible formation mechanism of these SFs is suggested, which involves a combination of Frank faults with Shockley ones. This provides a basic understanding of stacking faults in 6H-SiC and gives a rapid and non-destructive approach to identify SFs by low temperature photoluminescence. V C 2012 American Institute of Physics.

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Section: B Hr-tem Images Of Stacking Faultssupporting

confidence: 54%

“…5. Apart from SFs (3,4) and (4,4), several stacking faults in sequences of (3,5), (3,6), (3,7) can also be observed. At the bottom of Fig.…”

Section: B Hr-tem Images Of Stacking Faultsmentioning

confidence: 99%

mentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Shockley-Frank stacking faults in 6H-SiC

Sun

Robert

Andreadou

et al. 2012

Journal of Applied Physics

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Silicon Carbide Junction Field‐Effect Transistors (SiCJFETs)

Veliadis

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Wide bandgap semiconductors like silicon carbide (SiC) are currently being developed for high‐power/high‐temperature applications. Silicon carbide (SiC) is ideally suited for power switching because of its high saturated drift velocity, its high critical field strength, its excellent thermal conductivity, and its mechanical strength. For power devices, the 10‐fold increase in critical field strength of SiC relative to Si allows high‐voltage blocking layers to be fabricated significantly thinner than those of comparable Si devices. This reduces device ON‐state resistance and the associated conduction and switching losses, while maintaining the same high‐voltage blocking capability. The specific ON‐state resistance of 4H‐SiC is approximately 400 times lower than that of Si at a given breakdown voltage. This allows for high current operation at relatively low forward voltage drop. In addition, the wide bandgap of SiC allows operation at high temperatures where conventional Si devices fail. In this article, we will review the SiC single‐implant no epitaxial regrowth vertical channel junction field‐effect transistor (JFET). The feasibility of efficient 1200 V normally OFF JFET operation will be investigated. The all‐SiC JFET‐based cascode switch will be introduced and aspects of its operation evaluated. High‐temperature direct‐current (dc) characteristics of JFETs and 1200 V normally OFF cascode switches will be discussed. Large‐area high‐current JFETs and their current sharing and switching performances will be presented. Aspects of JFET fabrication, including their edge termination, will be provided. JFET wafer yields and parameter uniformities will be presented. Hard and unclamped inductive JFET switching evaluations will be introduced. Finally, a 9‐kV JFET will be introduced and its reliability under bipolar stress will be examined.

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Epitaxial Growth of Silicon Carbide

Kimoto¹,

Cooper

2014

Fundamentals of Silicon Carbide Technology

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Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

Cited by 407 publications

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Shockley-Frank stacking faults in 6H-SiC

Shockley-Frank stacking faults in 6H-SiC

Silicon Carbide Junction Field‐Effect Transistors (SiCJFETs)

Epitaxial Growth of Silicon Carbide

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