Properties and origins of different stacking faults that cause degradation in SiC PiN diodes

Jacobson, Henrik; Bergman, J. P.; Hallin, Christer; Janzén, Erik; Tuomi, T.; Lendenmann, H.

doi:10.1063/1.1635996

Cited by 92 publications

(88 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The number for each SF indicates how many times it appeared in the TEM measurements. Similarly, from HR-TEM images, Liu et al found the SFs in 6H-SiC with the faulted sequences of (3,2), (3,4), (3,5), (3,6), and (3,2,2,2), 13 which are also including in Table I. This indicates that all the SFs we observed are not specific in this 6H-SiC sample.…”

Section: B Hr-tem Images Of Stacking Faultssupporting

confidence: 55%

“…5. Apart from SFs (3,4) and (4,4), several stacking faults in sequences of (3,5), (3,6), (3,7) can also be observed. At the bottom of Fig.…”

Section: B Hr-tem Images Of Stacking Faultsmentioning

confidence: 99%

“…7(e), the SFs (3,11) can be formed. In the same way, three EFSFs can create the SFs (3,6) and four EFSFs accompanied with 1SSF can give rise to SFs (3,7). For the larger SFs (3,16) and (3,22), the formation mechanism can Fig.…”

Section: Formation Mechanisms Of Stacking Faultsmentioning

confidence: 99%

“…At the bottom of Fig. 5(a), the faulted area manifests a series of successive SFs (3,4), (3,6), (3,7), and (3,5). As it is well known, the SFs in 4H-SiC can be recognized as either 3C or 8H ribbons and, at least in the case of 3C, exhibit different thicknesses.…”

Section: B Hr-tem Images Of Stacking Faultsmentioning

confidence: 99%

“…5 For a long time, this problem has slowed down the development of SiC bipolar devices. 5,6 Different types of SFs have been theoretically investigated to increase understanding of their presence and formation. In 4H-SiC, focusing on pure Shockley SFs (SSFs) introduced by the motion of partial dislocations, Iwata et al investigated the corresponding energy levels.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Shockley-Frank stacking faults in 6H-SiC

Sun

Robert

Andreadou

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Effect of stacking fault and temperature on deformation behaviors of nanocrystalline Mg J. Appl. Phys. 112, 054322 (2012) Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers Appl. Phys. Lett. 101, 112102 (2012) Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN J. Appl. Phys. 112, 053512 (2012) Ruddlesden-Popper faults in LaNiO3/LaAlO3 superlattices J. Appl. Phys. 112, 013509 (2012) Optical and structural studies of homoepitaxially grown m-plane GaN Appl. Phys. Lett. 100, 172108 (2012) Additional information on J. Appl. Phys. We report on Shockley-Frank stacking faults (SFs) identified in 6H-SiC by a combination of low temperature photoluminescence (LTPL) and high resolution transmission electron microscopy (TEM). In the faulted area, stacking faults manifested as large photoluminescence emissions bands located in between the 6H-SiC signal (at $2.99 eV) and the 3C-SiC bulk-like one (at $2.39 eV). Each of the stacking fault related emission band had a four-fold structure coming from the TA, LA, TO, and LO phonon modes of 3C-SiC. Up to four different faults, with four different thickness of the 3C-SiC lamella, could be observed simultaneously within the extent of the laser excitation spot. From the energy of the momentum-conservative phonons, they were associated with excitonic energy gaps at E gx1 ¼ 2.837 eV, E gx2 ¼ 2.689 eV, E gx3 ¼ 2.600 eV and E gx4 ¼ 2.525 eV. In the same part where low temperature photoluminescence was performed, high resolution transmission electron microscopy measurements revealed stacking faults which, in terms of the Zhdanov notation, could be recognized as SFs (3, 4), (3,5), (3, 6), (3, 7), (3, 9), (3, 11), (3, 16) and (3, 22), respectively. Among them stacking fault (3, 4) was the most common one, but a faulted region with a (4, 4) 8H-SiC like sequence was also found. Using a type II 6H/3C/6H quantum-well model and comparing with experimental results, we find that the photoluminescence emissions with excitonic band gaps at 2.837 eV (E gx1 ), 2.689 eV (E gx2 ), 2.600 eV (E gx3 ) and 2.525 eV (E gx4 ) come from SFs (3, 4), (3, 5), (3, 6) and (3, 7), respectively. A possible formation mechanism of these SFs is suggested, which involves a combination of Frank faults with Shockley ones. This provides a basic understanding of stacking faults in 6H-SiC and gives a rapid and non-destructive approach to identify SFs by low temperature photoluminescence. V C 2012 American Institute of Physics.

show abstract