Prototype SiC bipolar diodes for 300A/4500V with 3.1V forward voltage prove the SiC power device performance. However, forward voltage degradation prevents industrial application. Electrical statistics are given, and the phenomenon is described by sequencing stacking fault expansion during current conduction. The sources for these faults are identified by electro luminescence to be dissociated dislocations, likely replicated from the substrate. The identification is benchmarked against KOH etch pit patterns and X-ray back reflection topographs. A variety of buffer layers to suppress the propagation of source defects from the substrate showed small improvements.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.