In the absence of samples suitable for transmission measurements, photoluminescence excitation spectra {PLE) have been found useful in the evaluation of detailed information about the lowest direct-absorption edge of GaN. In this work the results of PLE measurements are combined with data on reflection and luminescence in the intrinsic region to determine the positions of A-, 8-, and C-exciton ground-state transition energies and the lowest band gap.Neglecting polariton effects, the value of the A-exciton ground-state transition energy is determined as being F& =3.4751*0.0005 eV at 1.6 K from combined PLE and emission spectra. The corresponding values for 8 and C exciton transitions are found to be E&=3, 4815~0. 001 eV and E~&=3.493 +0. 005 eV from PLE spectra. The lowest band gap is determined to be E~= 3, 503+0 002 eV at 1, 6 K, which fixes the ground-state A-exciton binding energy as E~(A) =28&+ meV, in good agreement with the effective-mass value. The temperature dependence of the band gap could also be accurately measured in PLE spectra and can be described by an expression E~= [3.503+ {5.08x10 T )/{T -996)] eV for T&295 K, with an estimated relative uncertainty of + 0. 002 e V,

Infrared dielectric function spectra and phonon modes of high-quality, single crystalline, and highly resistive wurtzite ZnO films were obtained from infrared (300–1200 cm−1) spectroscopic ellipsometry and Raman scattering studies. The ZnO films were deposited by pulsed-laser deposition on c-plane sapphire substrates and investigated by high-resolution x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering experiments. The crystal structure, phonon modes, and dielectric functions are compared to those obtained from a single-crystal ZnO bulk sample. The film ZnO phonon mode frequencies are highly consistent with those of the bulk material. A small redshift of the longitudinal optical phonon mode frequencies of the ZnO films with respect to the bulk material is observed. This is tentatively assigned to the existence of vacancy point defects within the films. Accurate long-wavelength dielectric constant limits of ZnO are obtained from the infrared ellipsometry analysis and compared with previously measured near-band-gap index-of-refraction data using the Lyddane–Sachs–Teller relation. The ZnO model dielectric function spectra will become useful for future infrared ellipsometry analysis of free-carrier parameters in complex ZnO-based heterostructures.

We report on the emission properties of nonpolar a-plane GaN layers grown on r-plane sapphire. Temperature-, excitation-density-, and polarization-dependent photoluminescences and spatially resolved microphotoluminescence and cathodoluminescence are employed in order to clarify the nature of the different emission bands in the 3.0–3.5eV spectral range. In the near band-edge region the emission lines of the donor-bound excitons (3.472eV) and free excitons (3.478eV) are resolved in the polarized low-temperature spectra, indicating a good quality of the layers. At low energies two other emissions bands with intensity and shape varying with the excited area are observed. The 3.42eV emission commonly attributed to the excitons bound to basal plane stacking faults shows thermal quenching with two activation energies (7 and 30meV) and an S-shaped temperature dependence of the peak position. This behavior is analyzed in terms of hole localization in the vicinity of the stacking faults. The emission band that peaked at 3.29eV is found to blueshift and saturate with increasing excitation intensity. The spatially resolved cathodoluminesence measurements show that the emission is asymmetrically distributed around the triangular-shaped pits occurring at the surface. The 3.29eV emission is suggested to involve impurities, which decorate the partial dislocation terminating the basal stacking faults.

No abstract

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III−V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared active modes. We apply our model approach to monoclinic β-Ga 2 O 3 single-crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (201), are investigated by generalized spectroscopic ellipsometry within infrared and far-infrared spectral regions. We determine the frequency dependence of 4 independent β-Ga 2 O 3 Cartesian dielectric function tensor elements by matching large sets of experimental data using a point-by-point data inversion approach. From matching our monoclinic model to the obtained 4 dielectric function tensor components, we determine all infrared and far-infrared active transverse optic phonon modes with A u and B u symmetry, and their eigenvectors within the monoclinic lattice. We find excellent agreement between our model results and results of density functional theory calculations. We derive and discuss the frequencies of longitudinal optical phonons in β-Ga 2 O 3 . We derive and report density and anisotropic mobility parameters of the free charge carriers within the tin-doped crystals. We discuss the occurrence of longitudinal phonon plasmon coupled modes in β-Ga 2 O 3 and provide their frequencies and eigenvectors. We also discuss and present monoclinic dielectric constants for static electric fields and frequencies above the reststrahlen range, and we provide a generalization of the Lyddane-Sachs-Teller relation for monoclinic lattices with infrared and far-infrared active modes. We find that the generalized Lyddane-Sachs-Teller relation is fulfilled excellently for β-Ga 2 O 3 .

We investigated the temperature-dependent electrical properties of Pt/Ga2O3 Schottky barrier diodes (SBDs) fabricated on n–-Ga2O3 drift layers grown on single-crystal n+-Ga2O3 (001) substrates by halide vapor phase epitaxy. In an operating temperature range from 21 °C to 200 °C, the Pt/Ga2O3 (001) Schottky contact exhibited a zero-bias barrier height of 1.09–1.15 eV with a constant near-unity ideality factor. The current–voltage characteristics of the SBDs were well-modeled by thermionic emission in the forward regime and thermionic field emission in the reverse regime over the entire temperature range.

The mechanism for low-temperature photoluminescence (PL) emissions in GaNAs epilayers and GaAs/GaNxAs1−x quantum well (QW) structures grown by molecular-beam epitaxy is studied in detail, employing PL, PL excitation, and time-resolved PL spectroscopies. It is shown that even though quantum confinement causes a strong blueshift of the GaNAs PL emission, its major characteristic properties are identical in both QW structures and epilayers. Based on the analysis of the PL line shape, its dependence on the excitation power and measurement temperature, as well as transient data, the PL emission is concluded to be caused by a recombination of excitons trapped by potential fluctuations in GaNAs.