Fundamental energy gap of GaN from photoluminescence excitation spectra

Ḿonemar, B.

doi:10.1103/physrevb.10.676

Cited by 777 publications

(383 citation statements)

References 22 publications

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“…Here, the peak at 3.466 eV has higher intensity than the emission found at 3.388 eV, but, from other spectra, it was deduced that the intensities are not related to each other. The peak distinguished at 3.466 eV with a FWHM of 36 meV is ascribed to the donor bound exciton (DBE) emission of wurtzite GaN, 47 but the position here is slightly lower than normally found, indicating tensile stress in the GaN. 48 This is consistent with the findings discussed in Secs.…”

Section: Influence On Optical Propertiessupporting

confidence: 80%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition. From the influence of pressure, V/III ratio, and temperature, it was deduced that the growth process is determined by the mass-transport of gallium precursor material toward the substrate. The highest temperature yielded an improved epitaxial relationship between grown layer and substrate. X ray diffraction (XRD) pole figure analysis established the presence of two domains of epitaxial layers, namely (0001) h10 10i GaN k (001) [110] diamond and (0001) h10 10i GaN k (001) ½1 10 diamond, which are 90 rotated with respect to each other. The presence of these domains is explained by the occurrence of areas of (2 Â 1) and (1 Â 2) surface reconstruction of the diamond substrate. When applying highly misoriented diamond substrates toward the [110] diamond direction, one of the growth domains is suppressed and highly epitaxial GaN on (001) diamond is realized.

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Section: Influence On Optical Propertiessupporting

confidence: 80%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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“…3, bottom͒ reveals only the 3.38͑3͒ eV band gap characteristic of bulk GaN. 26 The low temperature ͑20 K͒ spectrum ͑Fig. 3, middle͒ is also consistent with high quality bulk GaN with a sharp excitonic transition at 3.45͑3͒ eV and lower energy features originating from FIG.…”

mentioning

confidence: 71%

Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride

Wallace¹,

Kim²,

Rose³

et al. 1998

Applied Physics Letters

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High pressure chemistry has traditionally involved applying pressure and increasing temperature until conditions become thermodynamically favorable for phase transitions or reactions to occur. Here, high pressure alone is used as a starting point for carrying out rapid, self-propagating metathesis reactions. By initiating chemical reactions under pressure, crystalline phases, such as gallium nitride, can be synthesized which are inaccessible when initiated from ambient conditions. The single-phase gallium nitride made by metathesis reactions under pressure displays significant photoluminescence intensity in the blue/ultraviolet region. The absence of size or surface-state effects in the photoluminescence spectra show that the crystallites are of micron dimensions. The narrow lines of the x-ray diffraction patterns and scanning electron microscopy confirm this conclusion. Brightly luminescent thin films can be readily grown using pulsed laser deposition.

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“…9 The binding energy is very high compared with other blue optoelectronic materials such as GaN ͑25 meV͒ 10 and ZnO ͑60 meV͒. 11 The high exciton binding energy, the exciton emission in UV, and the close lattice matching with Si make CuCl a potential candidate for Si based UV/blue emitting devices.…”

Section: Introductionmentioning

confidence: 99%

Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications

Natarajan

Daniels

Cameron

et al. 2006

Journal of Applied Physics

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Copper ͑I͒ chloride ͑CuCl͒ is a potential candidate for ultraviolet ͑UV͒ optoelectronics due to its close lattice match with Si ͑mismatch less than 0.4%͒ and a high UV excitonic emission at room temperature. CuCl thin films were deposited using radio frequency magnetron sputtering technique. The influence of target to substrate distance ͑d ts ͒ and sputtering pressure on the composition, microstructure, and UV emission properties of the films were analyzed. The films deposited with shorter target to substrate spacing ͑d ts =3 cm͒ were found to be nonstoichiometric, and the film stoichiometry improves when the substrate is moved away from the target ͑d ts = 4.5 and 6 cm͒. A further increase in the spacing results in poor crystalline quality. The grain interface area increases when the sputtering pressure is increased from 1.1ϫ 10 −3 to 1 ϫ 10 −2 mbar at d ts = 6 cm. Room temperature cathodoluminescence spectrum shows an intense and sharp UV exciton ͑Z 3 ͒ emission at ϳ385 nm with a full width at half maximum of 16 nm for the films deposited at the optimum d ts of 6 cm and a pressure of 1.1ϫ 10 −3 mbar. A broad deep level emission in the green region ͑ ϳ515 nm͒ is also observed. The relative intensity of the UV to green emission peaks decreased when the sputtering pressure was increased, consistent with an increase in grain boundary area. The variation in the stoichiometry and the crystallinity are attributed to the change in the intensity and energy of the flux of materials from the target due to the interaction with the background gas molecules.

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Fundamental energy gap of GaN from photoluminescence excitation spectra

Cited by 777 publications

References 22 publications

Realising epitaxial growth of GaN on (001) diamond

Realising epitaxial growth of GaN on (001) diamond

Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride

Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications

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