A leading edge 90 nm technology with 1.2 nm physical gate oxide, SO nm gate length, strained silicon, NiSi, 7 layers of Cu interconnects, and low k CDO for high performance dense logic is presented. Strained silicon is used to increase saturated NMOS and PMOS drive currents by 10-20% and mobility by > 50%. Aggressive design rules and unlanded contacts offer a l.0pm2 6-T S R A M cell using 193nm lithography. IntroductionThe power dissipation of modern microprocessors has been rapidly increasing, driven by increasing transistor count and clock frequencies. The rapidly increasing power has occurred even though the power per gate switching transition has decreased approximately (0.7)' per technology node due to voltage scaling and device area scaling. Figure 1 shows these trends for Intel's microprocessors and CMOS logic technology generations. In this paper we describe a 90 nm generation technology designed for high speed and low power operation. Strained silicon channel transistors are used to obtain the desired performance at 1.0V to 1.2V operation. renw 5 B 0 n 1 0 0 0 0~ Pentiud U) E 1.5 1 0.8 0.6 0.35 0.25 0.18 0.13 Technology (pm) Figure 1: Power and transistor switching energy trends. procesS Flow and Technology FeaturesFront-end technology features include shallow trench isolation, retrograde wells, shallow abrupt sourceldrain extensions, halo implants, deep sourcddrain, and nickel salicidation. N-wells and P-wells are formed with deep phosphw rous and shallow arsenic implants, and boron implants respectively. The trench isolation is 400 nm deep to provide robust inma-and inter-well isolation for N+ to P+ spacing below 240 nm while maintaining low junction capacitance. Sidewall spacers are formed with CVD Si,N4 deposition, followed by etch-back. Shallow sourcedrain extension regions are formed with arsenic for NMOS and boron for PMOS. Nisi is formed on poly-silicon gate and source-drain regions to provide low contact resistance.

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The addition of lithium amide (LiNH2) and ammonium chloride (NH4Cl) to metathesis (exchange) reactions between gallium triiodide (GaI3) and lithium nitride (Li3N) produces crystalline gallium nitride (GaN) in seconds at ambient pressure. A specially designed rate cell incorporating multiple thermocouples enables both the reaction velocity and temperatures to be measured. Without the additives, the GaI3/Li3N reaction propagates at >100 cm/s with a reaction temperature above 1300 K, which exceeds the 1150 K decomposition temperature of GaN. By adding an optimal ratio of LiNH2 and NH4Cl, the reaction velocity slows to about 3 cm/s with a reaction temperature near 1200 K. Rapid heat dissipation is found to be very important in these reactions in preventing the decomposition of GaN. By using a specially designed thermal dissipation cell, the yield of GaN can be increased up to 78.8%. Applying the concepts developed in the synthesis of GaN, crystalline InN has been synthesized for the first time using solid-state metathesis reactions.

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Solid-state metathesis (exchange) reactions can be used to synthesize many different transition-metal nitrides under ambient conditions including TiN, ZrN, and NbN. Typical metathesis reactions reach temperatures of greater than 1300 degrees C in a fraction of a second to produce these refractory materials in highly crystalline form. Likely due to the large amount of heat produced in these solid-state reactions, some transition-metal nitrides such as TaN, CrN, and gamma-Mo(2)N cannot easily be synthesized under ambient conditions. Here metathesis reactions are demonstrated to produce the cubic nitrides TaN, CrN, and gamma-Mo(2)N when sufficient pressure is applied before the reaction is initiated. By pressing a pellet of TaCl(5) and Li(3)N with an embedded iron wire, crystalline cubic TaN forms under 45 kbar of pressure after a small current is used to initiate the chemical reaction. Crystalline cubic CrN is synthesized from CrCl(3) and Li(3)N initiated under 49 kbar of pressure. Crystalline gamma-Mo(2)N is produced from MoCl(5) and Ca(3)N(2) (since MoCl(5) and Li(3)N self-detonate) initiated under 57 kbar of pressure. The addition of ammonium chloride to these metathesis reactions drastically lowers the pressure requirements for the synthesis of these cubic nitrides. For example, when 3 mol of NH(4)Cl is added to CrCl(3) and Li(3)N, crystalline CrN forms when the reaction is initiated with a resistively heated wire under ambient conditions. Cubic gamma-Mo(2)N also forms at ambient pressure when 3 mol of NH(4)Cl is added to the reactants MoCl(5) and Ca(3)N(2) and ignited with a resistively heated wire. A potential advantage of synthesizing gamma-Mo(2)N under ambient conditions is the possibility of forming high-surface-area materials, which could prove useful for catalysis. Nitrogen adsorption (BET) indicates a surface area of up to 30 m(2)/g using a Langmuir model for gamma-Mo(2)N produced by a metathesis reaction at ambient pressure. The enhanced surface area is confirmed using scanning electron microscopy.