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g-CuCl is a wide-band gap (E g ¼ 3:395 eV at 4 K), direct band gap, semiconductor material with a cubic zincblende lattice structure. A very large exciton binding energy (190 meV), assures efficient exciton-based emission at room temperature. Its lattice constant, a CuCl ¼ 0:541 nm means that the lattice mismatch to Si (a Si ¼ 0:543 nm) is o0.5%.g-CuCl on Si-the growth of a wide-band gap, direct band gap, optoelectronics material on silicon substrate is a novel material system, with compatibility to current Si-based electronic/optoelectronics technologies. Both n-type and p-type CuCl will be required for development of homojunction light-emitting diodes (LEDs). The authors report on the impact of incorporation of Zn for n-type doping of CuCl by co-evaporation of CuCl and ZnCl 2 .Polycrystalline Zn-doped g-CuCl thin films are grown on Si (1 1 1), Si (1 0 0), and glass substrates by physical vapour deposition. X-ray diffraction (XRD) studies confirm that this n-doped CuCl has a cubic zincblende structure with a preferred (1 1 1) orientation. Several excitonic bands are evident in low-temperature photoluminescence (PL) measurements such as the Z 3 free exciton at $388 nm; I 1 -bound exciton at $392 nm and M free biexciton at $393 nm. Cathodoluminescence (CL) and PL reveal a strong room temperature Z 3 excitonic emission at $385 nm. Electrical measurements indicate n-type conductivity with resistivity $34 Ocm. r

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