Electronic structure of the GaAs:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>scenter

Linnarsson, Margareta K.; Janzén, Erik; Ḿonemar, B.; Kleverman, Mats; Thilderkvist, A.

doi:10.1103/physrevb.55.6938

Cited by 211 publications

(232 citation statements)

References 16 publications

Supporting

Mentioning

198

Contrasting

Unclassified

Order By: Relevance

“…This conclusion was corroborated by infrared spectroscopy data, which revealed an acceptor level at about 0.113 eV above the top of the valence band [32]. The spectrum of this acceptor was thoroughly studied under the presence of uniaxial stress and magnetic field [44,45,49]. The results give the strong support for the A0(d 5 + h) impurity center [49].…”

Section: The Nature Of Mn Impuritysupporting

confidence: 66%

See 1 more Smart Citation

Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

View full text Add to dashboard Cite

During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d5 ) configuration are given. Then we analyze s, p -d exchange, together with resulting magnetooptical properties (in particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering are presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.

show abstract

Section: The Nature Of Mn Impuritysupporting

confidence: 66%

“…The spectrum of this acceptor was thoroughly studied under the presence of uniaxial stress and magnetic field [44,45,49]. The results give the strong support for the A0(d 5 + h) impurity center [49]. Also the magnetic data of GaAs:Mn could be successfully described taking into account A0(d5 + h) centers [40,50].…”

Section: The Nature Of Mn Impuritymentioning

confidence: 80%

Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

“…The presence of such an acceptor level has been verified by optical absorption studies. 4,5 In LT GaAs samples doped with Mn we would expect an additional absorption structure directly attributable to compensation. Indeed, in Mn-doped samples the As Ga antisite levels become depopulated and therefore can serve as final states for transitions from both the valence band and Mn-induced levels.…”

Section: A Spectroscopic Signatures Of Compensation In Ga 1àx Mn X Asmentioning

confidence: 99%

“…6,9,20,21,28,48,49 This picture stems from the fact that Mn is known to form a shallow acceptor level in GaAs when the doping is weak (10 17 cm Ϫ3 ). 4,5 The impurity band scenario assumes that as doping progresses from this very dilute limit, to the heavily doped regime, the shallow Mn acceptor level broadens and forms an impurity band ͑panel B in Fig. 7͒.…”

Section: B Electronic Structure Of Ferromagnetic Ga 1àx Mn X Asmentioning

confidence: 99%

“…Optical absorption measurements on nonmagnetic GaAs doped with Mn in the very dilute limit indicate that Mn forms a shallow acceptor level at 110 meV above the valence band. 4,5 However, the concept of an isolated impurity level is likely to break down at high doping levels ͑few atomic percent͒ needed to initiate the ferromagnetic state in Ga 1Ϫx Mn x As. Indeed, most band structure calculations predict a substantial hybridization of the GaAs bands with Mn d levels in this doping regime.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electronic structure and carrier dynamics of the ferromagnetic semiconductorGa1−xMnxAs<

et al. 2003

View full text Add to dashboard Cite

Infrared spectroscopy is used to study the doping and temperature dependence of the intragap absorption in the ferromagnetic semiconductor Ga 1Ϫx Mn x As, from a paramagnetic, xϭ0.017 sample to a heavily doped, xϭ0.079 sample. Transmission and reflectance measurements coupled with a Kramers-Kronig analysis allow us to determine the optical constants of the thin films. All ferromagnetic samples show a broad absorption resonance near 200 meV, within the GaAs band gap. We present a critical analysis of possible origins of this feature, including a Mn-induced impurity band and intervalence band transitions. The overall magnitude of the real part of the frequency dependent conductivity grows with increasing Mn doping, and reaches a maximum in the xϭ0.052 sample where T C saturates at the highest value (ϳ70 K) for the series. We observe spectroscopic signatures of compensation and track its impact on the electronic and magnetic state across the Mn phase diagram. The temperature dependence of the far infrared spectrum reveals a significant decrease in the effective mass of itinerant carriers in the ferromagnetic state. A simple scaling relation between changes in the mass and the sample magnetization suggest that the itinerant carriers play a key role in producing the ferromagnetism in this system.

show abstract

Spin-Flip Raman Study of Exchange Interactions in Bulk GaAs:Mn

Sapega

Ruf

Cardona

2001

phys. stat. sol. (b)

View full text Add to dashboard Cite

We report a detailed study of the exchange interactions in the neutral Mn acceptor, A 0 , and excitons bound to Mn acceptors, A 0 X, in bulk GaAs. By means of spin-flip Raman scattering we measured the constant of antiferromagnetic exchange interaction between valence band holes and electrons in the inner Mn shell, deformational fields near Mn ions, g-factors of electrons in the inner Mn shell, and the g-factor of the A 0 center. Our results show that Mn acting as deep acceptor in GaAs strongly modifies spin interactions in the A 0 X complex. The strong coupling of the Mn 3d 5 core states with holes and electrons reveals itself in multi-spin-flip Raman processes and leads to the renormalization of the conduction band electron g-factor.

show abstract

Electronic structure of the GaAs:MnGascenter

Cited by 211 publications

References 16 publications

Diluted Magnetic III-V Semiconductors

Diluted Magnetic III-V Semiconductors

Electronic structure and carrier dynamics of the ferromagnetic semiconductorGa1−xMnxAs<

Spin-Flip Raman Study of Exchange Interactions in Bulk GaAs:Mn

Contact Info

Product

Resources

About