Diluted Magnetic III-V Semiconductors

Twardowski, A.

doi:10.12693/aphyspola.98.203

Cited by 23 publications

(10 citation statements)

References 69 publications

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“…The latter quantity is usually much smaller than the former. To explain this almost complete compensation, it is assumed that most of the holes do not participate in the conduction because they are either tightly bound to the acceptors [6], localized due to the disorder, or compensated by As antisite defects [7].…”

Section: Introductionmentioning

confidence: 99%

Self-Compensating Incorporation of Mn in Ga_1-xMn_xAs

Mašek

Máca

2001

Acta Phys. Pol. A

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A CT A P HY SIC A P O LO N IC A ANo . 3 P r oceedi n gs of t h e XXX I n t ern at io n al Sch oo l o f Sem icond uct i ng Co m p ou n ds, Ja szo wi ec 200 1Self-C om p en sat in g In corp oration of Mn in G a 1À x Mn x As J. M aç sek and F. M Ç acaIn st i t ut e of Ph ysi cs, Ac ademy of Sciences of the Czech R epu bl i c Na Slo vance 2, 182 21 P ra ha 8, Czech Republ i c W e consi der hyp othetic al Ga 7 Mn A s8 ; Ga 1 6 MnA s16 ; and Ga 1 4 Mn 3 A s16 crystals w ith Mn in a substitutio nal , interstitial, and both positio ns. Spin --p olari zed full-poten tial lineari zed au gmented plane w ave calculatio ns were used to obtain their electronic structure. W e show that the interstitial Mn

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Section: Introductionmentioning

confidence: 99%

Self-Compensating Incorporation of Mn in Ga_1-xMn_xAs

Mašek

Máca

2001

Acta Phys. Pol. A

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“…Ap, 71.20.Nr, 71.55.Eq Diluted magnetic III-V semiconductors (DMS), such as Ga 1−x Mn x As, combine semiconducting and ferromagnetic properties [1,2,3,4] and are attractive for applications in spin electronics. These materials have been extensively studied in the last years, both experimentally and theoretically.…”

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confidence: 99%

Lattice constant in diluted magnetic semiconductors (Ga,Mn)As

2003

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We use the density-functional calculations to investigate the compositional dependence of the lattice constant of (Ga,Mn)As containing various native defects. The lattice constant of perfect mixed crystals does not depend much on the concentration of Mn. The lattice parameter increases if some Mn atoms occupy interstitial positions. The same happens if As antisite defects are present. A quantitative agreement with the observed compositional dependence is obtained for materials close to a complete compensation due to these two donors. The increase of the lattice constant of (Ga,Mn)As is correlated with the degree of compensation: the materials with low compensation should have lattice constants close to the lattice constant of GaAs crystal.PACS numbers: 71.15. Ap, 71.20.Nr, 71.55.Eq Diluted magnetic III-V semiconductors (DMS), such as Ga 1−x Mn x As, combine semiconducting and ferromagnetic properties [1,2,3,4] and are attractive for applications in spin electronics. These materials have been extensively studied in the last years, both experimentally and theoretically.There is, however, still not much known about the details of the crystal structure of these materials and about the incorporation of Mn atoms. It is generally believed that in well defined samples the volume of the MnAs precipitates is reduced to zero, and that Mn simply substitutes for the host cation in a tetrahedral (zinc-blende or wurtzite) crystal structure. Only recently it was suggested [5,6] and experimentally proved [7] that a portion of Mn occupies interstitial rather than substitutional positions in the zinc-blende lattice of (Ga,Mn)As. The interstitial Mn atoms act as double donors [5,6,8,9], in contrast to Mn atoms in the substitutional positions that are known to be acceptors.Almost unnoticed remains the surprising fact that the lattice constant of (Ga,Mn)As increases with increasing concentration of Mn [10]. According to the atomic radii [11], Mn atoms are smaller (R Mn = 1.17Å) than Ga atoms (R Ga = 1.25Å) and, in the simplest approximation, the lattice constant should be expected to decrease rather than to increase. This is also a result of a recent theoretical study [12] of the structure of zinc-blende α-MnAs. According to these calculations the lattice constant of α-MnAs is smaller then the lattice constant of GaAs.On the other hand, the lattice constant of GaAs is well known to increase in the presence of As antisite defects [13,14]. The MBE-grown GaAs crystals may contain up to 1 atomic percent of these defects and a large amount of the antisite defects is expected also in (Ga,Mn)As [15]. Being donors, they have an important role in the compensation of Mn acceptors. It was also shown recently [16] that formation energy of an As antisite defect in (Ga,Mn)As decreases remarkably with the increasing content of Mn and that the concentration of As antisites should be correlated with the concentration of Mn atoms. This indirect mechanism, i.e., the increasing number of the As antisites due to the addition of Mn, could be a possible...

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“…There are, of course, a number of other recent review articles describing many aspects of ferromagnetic III-V [30,31,32], II-VI [33,34], and IV-VI materials [12], which are not touched upon in this paper.…”

Section: Introductionmentioning

confidence: 99%

Ferromagnetic Semiconductors

2012

Semiconductor Spintronics

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The current status and prospects of research on ferromagnetism in semiconductors are reviewed. The question of the origin of ferromagnetism in europium chalcogenides, chromium spinels and, particularly, in diluted magnetic semiconductors is addressed. The nature of electronic states derived from 3d of magnetic impurities is discussed in some details. Results of a quantitative comparison between experimental and theoretical results, notably for Mn-based III-V and II-VI compounds, are presented. This comparison demonstrates that the current theory of the exchange interactions mediated by holes in the valence band describes correctly the values of Curie temperatures T C , magnetic anisotropy, domain structure, and magnetic circular dichroism. On this basis, chemical trends are examined and show to lead to the prediction of semiconductor systems with T C that may exceed room temperature, an expectation that are being confirmed by recent findings. Results for materials containing magnetic ions other than Mn are also presented emphasizing that the double exchange involving hoping through d states may operate in those systems.

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Diluted Magnetic III-V Semiconductors

Cited by 23 publications

References 69 publications

Self-Compensating Incorporation of Mn in Ga_1-xMn_xAs

Self-Compensating Incorporation of Mn in Ga_1-xMn_xAs

Lattice constant in diluted magnetic semiconductors (Ga,Mn)As

Ferromagnetic Semiconductors

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Diluted Magnetic III-V Semiconductors

Cited by 23 publications

References 69 publications

Self-Compensating Incorporation of Mn in Ga1-xMnxAs

Self-Compensating Incorporation of Mn in Ga1-xMnxAs

Lattice constant in diluted magnetic semiconductors (Ga,Mn)As

Ferromagnetic Semiconductors

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Self-Compensating Incorporation of Mn in Ga_1-xMn_xAs

Self-Compensating Incorporation of Mn in Ga_1-xMn_xAs