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Structural and magnetic properties in Mn-doped GaN grown by metal organic chemical vapor deposition Appl. Phys. Lett. 92, 152116 (2008); 10.1063/1.2909545 Anomalous magnetic properties of the ferrimagnetic semiconductor on Ga-doped sulphur spinel

Structural and magnetic properties of (Ga,Mn)N layers grown on SiC by reactive molecular beam epitaxy

Magnetic circular dichroism (MCD) of a ferromagnetic diluted magnetic semiconductor Ga1−xMnxAs films was measured to clarify their electronic structure. Strong enhancement of MCD by Mn substitution indicated a strong sp–d hybridization. The p–d exchange interaction was concluded to be antiferromagnetic, which was in contrast with the reported ferromagnetic p–d exchange in very diluted paramagnetic GaAs:Mn bulk crystals. The change of the character of the p–d exchange interaction is due to the unique feature of Ga1−xMnxAs that the relative abundance of the neutral and ionized Mn acceptors controls the p–d exchange.

Articles you may be interested inAbove room-temperature ferromagnetism of Mn delta-doped GaN nanorods Appl. Phys. Lett.Ferromagnetic behavior of GaN doped with Mn (Ga 1Ϫz Mn z N) grown by the ammonothermal and chemical transport methods is discussed in terms of a second phase ͑ferromagnetic one͒ produced during the growth process. The reference manganese nitride samples grown by the same method as ͑Ga,Mn͒N reveal room-temperature ferromagnetic behavior, depending on the growth details. Different Mn x N y phases are suggested to be responsible for ferromagnetic behavior of ͑Ga,Mn͒N.