Magnetic and optical properties of GaMnN magnetic semiconductor

Abstract

Structural and magnetic properties in Mn-doped GaN grown by metal organic chemical vapor deposition Appl. Phys. Lett. 92, 152116 (2008); 10.1063/1.2909545 Anomalous magnetic properties of the ferrimagnetic semiconductor on Ga-doped sulphur spinel

Structural and vibrational analysis of nanocrystalline Ga1−xMnxN films deposited by reactive magnetron sputtering

“…The success of the preparation of ferromagnetic Ga 1−x Mn x N using the molecular beam epitaxy ͑MBE͒ technique is quite recent [3][4][5][6][7] and has attracted the attention of several groups concerning the mentioned as well as other techniques. [8][9][10][11][12][13][14] In a recent report we have described the preparation of Ga 1−x Mn x N nanocrystalline films using the sputtering technique. 15 The low substrate temperature, allowed by the plasma breaking of N 2 molecules and the use a metallic Ga target covered by small Mn pieces, makes the preparation and Mn incorporation simple and versatile.…”

“…Among the advantages of the sputtering technique is the possibility to grow the films at relatively low temperatures, resulting in more control on the phase separation during growth. The role of phase separation and its relation with the ferromagnetic properties in this material are at present under debate, 9,17,18 giving importance to the understanding of the Mn role while affecting the structural, vibrational, and electronic properties of the material.…”

“…7,9,10,19,20 In particular, the Rietveld refinement of the diffractograms can address thoroughly the question of phase formation and Raman scattering is efficient to reveal the presence of ordered polarization-dependent vibrational modes as well as structural disorder and local vibrational modes. Although the use of these techniques concerning the presence of nonmagnetic impurities in crystalline GaN is relatively well explored in the literature, the investigation related to the presence of magnetic elements presents only a few reports.…”

One-pot simple synthesis and characterisation of Mn2+-doped GaN nanorods by RAPET method

“…Near or above room temperature, ferromagnetism was found by a number of groups, [20,22À29] whereas no ferromagnetism or a very low T C was reported. [30,31] A number of approaches have been explored to synthesise singlephase Mn-doped GaN, which includes epitaxial growth, chemical vapour deposition, pulse laser deposition, sputtering,[32À35] solvothermal, [36,37] azidothermal metathesis, [38] sublimation sandwich method [39] and carbothermal nitridation. [40] In this work, we demonstrate a simple, efficient and economical synthesis method for the fabrication of nanocrystalline Mn-doped GaN nanorods.…”

Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics

“…Since the Curie temperature is predicted to be a strong function of bandgap, magnetic ion concentration and carrier concentration in the semiconductor, it has been proposed that materials with gaps much larger than GaAs and InAs should be investigated [9]. There has been some success in initial experiments on (Ga,Mn)N, prepared either by bulk growth processes [10,11] or direct implantation of Mn into GaN [12,13]. The bulk crystals exhibit paramagnetic behavior, while the implanted GaN shows ferromagnetic contributions to the magnetism below Â/250 K.…”