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Szczytko, Jacek; Mac, W.; Twardowski, A.; Matsukura, F.; Ohno, Hideo

doi:10.1103/physrevb.59.12935

Cited by 157 publications

(156 citation statements)

References 23 publications

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“…On the other hand, the direct transmission experiment revealed a different absorption edge splitting [66]. The absorption edge was very broad and no excitonic structure was visible.…”

Section: S P-d Exchange Interactionmentioning

confidence: 95%

“…Consequently, the Moss-Burstein shift of the absorption edge becomes sizable and is different for transitions originating from different valence subbands split by s, p-d exchange interaction. It appears that in such case, for FM s-d exchange (N0α > 0) and AFM p-d exchange (N0β < 0), the edge splitting is of FM-type [66]. In other words, due to the Moss-Burstein shift the sense of the edge splitting is opposite to the sign of N0β (assuming typical values of N0$ and N0 α).…”

Section: S P-d Exchange Interactionmentioning

confidence: 99%

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Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d5 ) configuration are given. Then we analyze s, p -d exchange, together with resulting magnetooptical properties (in particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering are presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.

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“…On the other hand, the direct transmission experiment revealed a different absorption edge splitting [66]. The absorption edge was very broad and no excitonic structure was visible.…”

Section: S P-d Exchange Interactionmentioning

confidence: 95%

Section: S P-d Exchange Interactionmentioning

confidence: 99%

Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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“…by the Moss-Burstein shift induced by the increase of the Fermi energy, which is higher than the valence band in terms of hole energy. 13 But the reason for the blue shift at around the E 1 energy is not clear at present (The band gap energy at Λ is probably modified by heavy Mn doping). Figure 2(b) shows MCD spectra with various magnetic fields shown in Fig.…”

mentioning

confidence: 99%

Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs

Ohya

Ohno

Tanaka

2007

Applied Physics Letters

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We have studied the magneto-optical and magnetotrasnport properties of Ga 1-x Mn x As thin films with high Mn concentrations (x= 12.2 -21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth temperature to as low as 150-190ºC and by reducing the film thickness to 10 nm in order to prevent precipitation of hexagonal MnAs clusters. Magnetic circular dichroism (MCD) and anomalous Hall effect measurements indicate that these GaMnAs films have the nature of intrinsic ferromagnetic semiconductors with high ferromagnetic transition temperature up to 170 K. III-V-based ferromagnetic semiconductor (FMS) GaMnAs 1,2 is a good model system for future spintronic devices. Recently, large tunneling magnetoresistance (TMR) and TMR oscillation induced by the resonant tunneling effect 6 were observed in GaMnAs-based single-barrier and double-barrier heterostructures, respectively. These results indicate that the FMS heterostructures are very promising for future quantum devices using spin degrees of freedom. For realizing such devices operating at room temperature, however, it is important to increase the Curie temperature (T C

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“…37 Our PR results for the (Ga,Mn)As layers with higher, 0.8% and 1.2%, Mn content and p-type conductivity, showing an increase in the interband transition energy, are interpreted as a result of the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free-hole concentration. 38 The band structure corresponding to the (Ga,Mn)As layer with 1.2% Mn content, displaying the Fermi level position below the top of the GaAs valence band, is schematically shown in Fig. 5c.…”

Section: Photoreflectance Results and Discussionmentioning

confidence: 99%

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Yastrubchak

Sadowski

Krzyżanowska

et al. 2013

Journal of Applied Physics

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Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic-and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gaptransition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with ntype conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediated ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.

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Antiferromagneticp−dexchange in ferromagneticGa1−xMn

Cited by 157 publications

References 23 publications

Diluted Magnetic III-V Semiconductors

Diluted Magnetic III-V Semiconductors

Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

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