Magneto-optic effect of the ferromagnetic diluted magnetic semiconductor Ga1−xMnxAs

Ando, Koji; Hayashi, Takashi; Tanaka, Masaaki; Twardowski, A.

doi:10.1063/1.367780

Cited by 168 publications

(125 citation statements)

References 12 publications

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“…One can distinguish a linear increase of the magneto-optical signal in magnetic fields up to 35 mT (with a slope of 0:05 mrad=mT), followed by a jump and a saturation at 75 mT. This linear increase in low magnetic fields and jumps slightly below 0.1 T are in agreement with results of previous studies of magnetic properties of (Ga,Mn)As [5,10]. From these data one can see that the detected photoinduced signal is about 0:05 0:005 mrad at an excitation power of 0:1 GW=cm 2 .…”

supporting

confidence: 81%

Picosecond Dynamics of the Photoinduced Spin Polarization in Epitaxial (Ga,Mn)As Films

et al. 2004

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Static and time-resolved magneto-optical spectra of the ferromagnetic semiconductor (Ga,Mn)As show that a pulsed photoexcitation with a fluence of 10 J=cm 2 is equivalent to the application of an external magnetic field of about 1 mT, which relaxes with a decay time of 30 ps. This relaxation is attributed to the spin relaxation of electrons in the conduction band and is found to be not affected by interactions with Mn ions.

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supporting

confidence: 81%

Picosecond Dynamics of the Photoinduced Spin Polarization in Epitaxial (Ga,Mn)As Films

et al. 2004

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“…In the case of GaMnAs epilayers, where only A -centers were visible and thus AFM p-d exchange could be anticipated, the first experiments seemed to corroborate the expectations [65]. On the other hand, the direct transmission experiment revealed a different absorption edge splitting [66].…”

Section: S P-d Exchange Interactionsupporting

confidence: 70%

“…it is of FM-type. This result contradicts the reflectance magnetic circular dichroism (MCD) observation [65]. The edge splitting closely follows magnetization of the epilayer, showing a typical DMS behavior.…”

Section: S P-d Exchange Interactioncontrasting

confidence: 55%

Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d5 ) configuration are given. Then we analyze s, p -d exchange, together with resulting magnetooptical properties (in particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering are presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.

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“…2(c). 12 In all the spectra of Fig. 2(a), two broad negative peaks at around 1.9-2.0 eV and 3 eV are seen, corresponding to the optical transitions at Г and Λ critical points, respectively.…”

mentioning

confidence: 99%

Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs

Ohya

Ohno

Tanaka

2007

Applied Physics Letters

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We have studied the magneto-optical and magnetotrasnport properties of Ga 1-x Mn x As thin films with high Mn concentrations (x= 12.2 -21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth temperature to as low as 150-190ºC and by reducing the film thickness to 10 nm in order to prevent precipitation of hexagonal MnAs clusters. Magnetic circular dichroism (MCD) and anomalous Hall effect measurements indicate that these GaMnAs films have the nature of intrinsic ferromagnetic semiconductors with high ferromagnetic transition temperature up to 170 K. III-V-based ferromagnetic semiconductor (FMS) GaMnAs 1,2 is a good model system for future spintronic devices. Recently, large tunneling magnetoresistance (TMR) and TMR oscillation induced by the resonant tunneling effect 6 were observed in GaMnAs-based single-barrier and double-barrier heterostructures, respectively. These results indicate that the FMS heterostructures are very promising for future quantum devices using spin degrees of freedom. For realizing such devices operating at room temperature, however, it is important to increase the Curie temperature (T C

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Magneto-optic effect of the ferromagnetic diluted magnetic semiconductor Ga1−xMnxAs

Cited by 168 publications

References 12 publications

Picosecond Dynamics of the Photoinduced Spin Polarization in Epitaxial (Ga,Mn)As Films

Picosecond Dynamics of the Photoinduced Spin Polarization in Epitaxial (Ga,Mn)As Films

Diluted Magnetic III-V Semiconductors

Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs

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