Synthesis and Applications of III–V Nanowires

Abstract

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III−V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates

“…The GaN NWs were grown by selective‐area MOCVD on a 100 nm‐thick SiN x mask with circular nanosized openings deposed on the GaN/PSS template. Usually, the selective‐area MOCVD of GaN results in a pyramidal shape structure because the growth rate of planes is much slower compared with the growth rate of planes ( m ‐planes) and (0001) planes ( c ‐planes) . However, the recent studies on the growth kinetics have shown that there is a growth window to obtain NWs instead of pyramids .…”

“…Usually, the selective-area MOCVD of GaN results in a pyramidal shape structure because the growth rate of ð101 1Þ planes is much slower compared with the growth rate of ð101 0Þ planes (m-planes) and (0001) planes (c-planes). [11] However, the recent studies on the growth kinetics have shown that there is a growth window to obtain NWs instead of pyramids. [11,12] Applying optimized growth conditions, we were able to grow GaN NWs with a hexagonal cross-section and length of more than 100 nm.…”

“…[11] However, the recent studies on the growth kinetics have shown that there is a growth window to obtain NWs instead of pyramids. [11,12] Applying optimized growth conditions, we were able to grow GaN NWs with a hexagonal cross-section and length of more than 100 nm.…”

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

“…В настоящее время многие полупроводниковые приборы выполнены на основе наноструктур с размерами активных областей порядка десятков нанометров [10][11][12][13]. В таких структурах свойства поверхностей и интерфейсов становятся определяющими.…”

“…Несмотря на наличие целого ряда обзорных статей, посвященных приборам на основе полупроводников А III В V (например, [10,12,13,21,28,29]), проблема химической модификации электронных свойств поверхности рассматривается только вскользь. С другой стороны, имеющиеся обзоры [23,30,31], посвященные модификации электронных свойств поверхностей полупроводников А III В V , были опубликованы сравнительно давно и соответственно не отражают в полной мере текущее состояние исследований данной проблемы.…”