Evidence for Two Mg Related Acceptors in GaN

Ḿonemar, B.; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, J. P.; Kawashima, T.; Amano, Hiroshi; Akasaki, Isamu; Paskova, T.; Figge, S.; Hommel, D.; Usui, Akira

doi:10.1103/physrevlett.102.235501

Cited by 114 publications

(138 citation statements)

References 23 publications

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“…3 is shown a low temperature PL spectrum for sample B in the near bandgap region, before and after anneal. The ABE2 peak is more dominant after anneal, similar to the case of c-plane growth 8 . An interesting observation is the presence a several very strong lines in the spectral range 3.38 eV -3.42 eV.…”

Section: Annealing and Optical Measurementssupporting

confidence: 50%

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Photoluminescence of Mg-doped m -plane GaN grown by MOCVD on bulk GaN substrates

et al. 2011

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. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the low temperature BE spectra on excitation intensity as well as the transient decay behavior demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also demonstrated and briefly discussed.

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Section: Annealing and Optical Measurementssupporting

confidence: 50%

“…A weaker peak (X) at 3.444 eV with a low energy acoustic phonon wing completes the near bandgap spectrum. This peak was not observed in our previous studies on Mg-doping in c-plane GaN 8 . A possible explanation of this weak peak could be a deep acceptor bound exciton.…”

Section: Annealing and Optical Measurementsmentioning

confidence: 39%

Photoluminescence of Mg-doped m -plane GaN grown by MOCVD on bulk GaN substrates

et al. 2011

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“…The acceptor ground state appears to be approximately effectivemasslike, with a strong anisotropy of the bound hole g tensor. 19,24 In material of sufficiently low doping, a second emission line of the A 0 X , 0.8 meV lower in energy is also resolved. The doublet structure was tentatively interpreted as due to the internal coupling in the A 0 X complex.…”

Section: Ganmentioning

confidence: 98%

“…The shallowest A 0 X state has a PL line at about 3.466 eV in unstrained GaN. 22 Its origin is an Mgrelated acceptor, 23 stable in n-GaN and having interesting properties in p-GaN ͑instability and metastability 19 ͒. The acceptor ground state appears to be approximately effectivemasslike, with a strong anisotropy of the bound hole g tensor.…”

Section: Ganmentioning

confidence: 99%

“…The difference in energy between acceptorbound excitons and donor-bound excitons is typically about 5 meV in GaN. 19 In addition, the donor-bound exciton exhibits a series of narrow high-energy features corresponding to excited rotational states of the hole and to hydrogenic excited states of electron. The valence-band structure calculation indicates that acceptor-bound exciton lines corresponding to excited states will be degenerate with the donorbound exciton, free exciton, and the continuum.…”

Section: ͑62͒mentioning

confidence: 99%

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Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors

et al. 2010

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We describe the internal structure of acceptor-bound excitons in wurtzite semiconductors. Our approach consists in first constructing, in the context of angular momentum algebra, the wave functions of the two-hole system that fulfill Pauli's exclusion's principle. Second, we construct the acceptor-bound exciton states by adding the electron states in a similar manner that two-hole states are constructed. We discuss the optical selection rules for the acceptor-bound exciton recombination. Finally, we compare our theory with experimental data for CdS and GaN. In the specific case of CdS for which much experimental information is available, we demonstrate that, compared with cubic semiconductors, the sign of the short-range hole-exchange interaction is reversed and more than one order of magnitude larger. The whole set of data is interpreted in the context of a large value of the short-range hole-exchange interaction ⌶ 0 = 3.4Ϯ 0.2 meV. This value dictates the splitting between the ground-state line I 1 and the other transitions. The values we find for the electron-hole spin-exchange interaction and of the crystal-field splitting of the two-hole state are, respectively, −0.4Ϯ 0.1 and 0.2Ϯ 0.1 meV. In the case of GaN, the experimental data for the acceptor-bound excitons in the case of Mg and Zn acceptors, show more than one bound-exciton line. We discuss a possible assignment of these states.

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Predicting Polaronic Defect States by Means of Generalized Koopmans Density Functional Calculations

Lany

2011

Advanced Calculations for Defects in Materials

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Evidence for Two Mg Related Acceptors in GaN

Cited by 114 publications

References 23 publications

Photoluminescence of Mg-doped m -plane GaN grown by MOCVD on bulk GaN substrates

Photoluminescence of Mg-doped m -plane GaN grown by MOCVD on bulk GaN substrates

Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors

Predicting Polaronic Defect States by Means of Generalized Koopmans Density Functional Calculations

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