A comprehensive study on the effect of extrinsic base optimization on the RF performance of an advanced SiGe HBT is presented. An optimized extrinsic poly base with its interface to the epi-base passivated by boron ions is demonstrated to enhance the f max and the current gain almost two times and to reduce the low-frequency 1/f noise ten times and noise figure (NF) 0.5 dB, achieving f max of 45 GHz, 1/f noise corner frequency of 700 Hz at I B = 1:0 A, NF 1:0 dB at 900 MHz. Early voltage V A of 200 V is achieved, while maintaining a BV CEO of 8.0 V.
Low-frequency (l/J) noise has been characterized for the first time in TFSOI BiCMOS devices designed for low power high frequency applications. In the bipolar transistors, Vf noise obeyed a square law dependence on base current and was proportional to the inverse of the area. Aside from the expected l/f noise, we have also observed a bias dependent generation-recombination (G/R) noise component in a small portion of these TFSOI BJT's. The l/f noise in the near-fullydepleted MOSIFET's was found to be bias independent in both the linear and saturation region of operation. However, when operated in the subthreshold regime, extraneous generationrecombination (G/R) noise becomes apparent.
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