Low-frequency noise dependence of TFSOI BiCMOS for low power RF mixed-mode applications

Abstract

Low-frequency (l/J) noise has been characterized for the first time in TFSOI BiCMOS devices designed for low power high frequency applications. In the bipolar transistors, Vf noise obeyed a square law dependence on base current and was proportional to the inverse of the area. Aside from the expected l/f noise, we have also observed a bias dependent generation-recombination (G/R) noise component in a small portion of these TFSOI BJT's. The l/f noise in the near-fullydepleted MOSIFET's was found to be bias independent in both the linear and saturation region of operation. However, when operated in the subthreshold regime, extraneous generationrecombination (G/R) noise becomes apparent.

Empirical correlation between AC kink and low-frequency noise overshoot in SOI MOSFETs

“…Low-frequency noise measurements were made using an HP 3561A Dynamic Signal Analyzer with the gate electrode ac shorted to ground by a capacitor [8]. AC output conductances were measured using an HP 4284A Precision LCR meter and an HP 4145B Semiconductor Parameter Analyzer controlled by IC-CAP [9].…”

Silicon on Insulator Technology Review

“…Standard LOCOS (Local Oxidation of Silicon) or STI (Shallow Trench Isolation) processes are employed to provide lateral isolation from adjacent devices. [130,129,78]Most of the early SOI devices were fabricated with SOS (Silicon-On-Sapphire) wafers. The unique feature of today's SOI wafers is that they have a buried silicon oxide (Buried Oxide, or BOX) layer extending across the entire wafer, just below a surface layer of device-quality singlecrystal silicon.. At the present time, most SOI wafers are fabricated by use of one of two basic approaches.…”

A Theoretical Study of Low Power Soi Technology

“…Standard LOCOS (Local Oxidation of Silicon) or STI (Shallow Trench Isolation) processes are employed to provide lateral isolation from adjacent devices. [3,4,5]Most of the early SOI devices were fabricated with SOS (Silicon-On-Sapphire) wafers. The unique feature of today"s SOI wafers is that they have a buried silicon oxide (Buried Oxide, or BOX) layer extending across the entire wafer, just below a surface layer of device-quality single crystal silicon.…”