Comparison of time-to-failure of GeSi and Si bipolar transistors

Neugroschel, A.; Sah, C. T.; Ford, J.M.; Steele, John W.; Tang, R.; Stein, C. R.

doi:10.1109/55.491832

Cited by 23 publications

(5 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…After three generations of productionqualified IBM SiGe BiCMOS technology, with Ge composition now reaching 25%, we have not identified any reliability issue that can be directed to the addition of Ge. This is consistent with the observation from a similar non-IBM SiGe technology [83]. Instead, considerable suppression of boron out-diffusion from the base layer with the addition of Ge has been observed, which would result in the improvement of the base width control and stability.…”

Section: Hbt Reliabilitysupporting

confidence: 91%

Foundation of rf CMOS and SiGe BiCMOS technologies

et al. 2003

View full text Add to dashboard Cite

This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

show abstract

Section: Hbt Reliabilitysupporting

confidence: 91%

Foundation of rf CMOS and SiGe BiCMOS technologies

et al. 2003

View full text Add to dashboard Cite

show abstract

“…Using chemical vapor deposition (CVD) [2]- [5], the SiGe base of a HBT can be grown selectively on top of a Si collector only [4], [5], or nonselectively on top of the Si collector and the LOCOS [2], [3] as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Extrinsic base optimization for high-performance RF SiGe heterojunction bipolar transistors

Tang

Ford²,

Pryor³

et al. 1997

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

A comprehensive study on the effect of extrinsic base optimization on the RF performance of an advanced SiGe HBT is presented. An optimized extrinsic poly base with its interface to the epi-base passivated by boron ions is demonstrated to enhance the f max and the current gain almost two times and to reduce the low-frequency 1/f noise ten times and noise figure (NF) 0.5 dB, achieving f max of 45 GHz, 1/f noise corner frequency of 700 Hz at I B = 1:0 A, NF 1:0 dB at 900 MHz. Early voltage V A of 200 V is achieved, while maintaining a BV CEO of 8.0 V.

show abstract

“…Therefore the DC current gain decreases, as a consequence. The decrease of the DC current gain associated to the rise up of a non-ideal base current components and an unaffected collector current are the typical signatures of a hot carrier stress [3,4,5,6], indicating that our stress conditions are meaningful to the goal of our investigation. carrier stress The hot carrier induced degradation of the DC characteristics has been described using the numerical simulator BLAZE TM .…”

Section: Hot Electron Stressmentioning

confidence: 92%

“…During the stress a reverse base-emitter junction bias of 4V was applied up to 10 minutes. The applied stress voltage is quite high and it was chosen, in order to accelerate the stress with the aim of collecting data in a short time [3]. Generally speaking, strongly accelerated stress conditions have to be considered with attention, because they can trigger degradation mechanisms not present under the normal operation conditions.…”

Section: Hot Electron Stressmentioning

confidence: 99%

“…We ruled out to bias the transistor in the reverse active region during the stress (ForwardCollector stress) as a way to accelerate the degradation, because in this case the hot carriers responsible for the device degradation are mainly hot electrons. It was demonstrated that hot-holes and hot-electrons stresses cannot be considered equivalent [3]. Since in the practice the base-collector junction is usually reverse biased, we considered the hot-holes stress more meaningful than the hot-electrons one.…”

Section: Hot Electron Stressmentioning

confidence: 99%

See 1 more Smart Citation

Reliability investigation in SiGe HBT's

Kuchenbecker

Borgarino²,

Bary³

et al.

2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496)

View full text Add to dashboard Cite

This paper addresses some reliability properties of SiGe HBT's. We first have verified that no major problems were related to the SiGe layer through DC life tests experiments. In the second step, we have investigated the hot carrier influence on the DC, Noise and Microwave properties of these devices. We found that some degradation were occurring at the extrinsic base region in the vicinity of the emitter associated to some surface recombination. These assumptions have been described by physical simulations and confirmed by low frequency noise characterization. Finally, it has been demonstrated that microwave properties are affected by the mechanism and we propose a bias method that results to its minimization

show abstract

Comparison of time-to-failure of GeSi and Si bipolar transistors

Cited by 23 publications

References 7 publications

Foundation of rf CMOS and SiGe BiCMOS technologies

Foundation of rf CMOS and SiGe BiCMOS technologies

Extrinsic base optimization for high-performance RF SiGe heterojunction bipolar transistors

Reliability investigation in SiGe HBT's

Contact Info

Product

Resources

About