Optical modulators formed in silicon are the keystone to many low cost optical applications. Increasing the data rate of the modulator benefits the efficiency of channel usage and decreases power consumption per bit of data. Silicon-based modulators which operate via carrier depletion have to the present been demonstrated at data rates up to 40 Gb/s; however, here we present for the first time optical modulation at 50 Gb/s with a 3.1-dB extinction ratio obtained from carrier depletion based phase shifter incorporated in a Mach-Zehnder interferometer. A corresponding optical insertion loss of approximately 7.4 dB is measured.Index Terms-High speed, Mach-Zehnder interferometer (MZI), optical modulator, silicon photonics.
Abstract-We report on a heterogeneously integrated InP/SOI laser source realized through DVS-BCB wafer bonding. The hybrid lasers present several new features. The III-V laser is only 1.7μm wide, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with highperformance modulator designs and allowing efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30mA and an output power of more than 4mW at room temperature in continous wave operation regime. Continuous wave lasing up to 70C is obtained.Index Terms-Hybrid integrated circuits, silicon laser, silicon-on-insulator (SOI) technology, adiabatic taper.
High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.
We present a detailed investigation of the different processes responsible for the optical nonlinearities of silicon nanocrystals at 1550 nm. Through z-scan measurements, the bound-electronic and excited carrier contributions to the nonlinear refraction were measured in presence of two-photon absorption. A study of the nonlinear response at different excitation powers has permitted to determine the change in the refractive index per unit of photo-excited carrier density sigma(r) and the value of the real bound-electronic nonlinear refraction n(2be) as a function of the nanocrystals size. Moreover at high excitation power, a saturation of the nonlinear absorption was observed due to band-filling effects.
Abstract-We report on the performance of a compact multiwavelength laser (MWL) source heterogeneously integrated with and coupled to a silicon-on-insulator (SOI) waveguide circuit. The MWL consists of four InP-based microdisk lasers, coupled to a common SOI wire waveguide. The microdisk lasers operate in continuous-wave regime at room temperature, with a threshold current around 0.9 mA and a waveguide-coupled slope efficiency of up to 8 W/mA, for a microdisk diameter of 7.5 m. The output spectrum contains four laser peaks uniformly distributed within the free-spectral range of a single microdisk. While thermal crosstalk is negligible, laser peak output powers vary up to 8 dB for equal microdisk drive currents, as a result of loss due to coupling with higher order modes supported by the 1-m-thick microdisks. This nonuniformity could be eliminated by reducing the microdisk thickness.Index Terms-Heterogeneous integration, microdisk laser, multiwavelength laser source, silicon photonics.
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