Abstract:A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 ⁰C and a thermooptic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

Abstract-We report on a heterogeneously integrated InP/SOI laser source realized through DVS-BCB wafer bonding. The hybrid lasers present several new features. The III-V laser is only 1.7μm wide, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with highperformance modulator designs and allowing efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30mA and an output power of more than 4mW at room temperature in continous wave operation regime. Continuous wave lasing up to 70C is obtained.Index Terms-Hybrid integrated circuits, silicon laser, silicon-on-insulator (SOI) technology, adiabatic taper.

Abstract-This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s. Index Terms-Hybrid photonic integrated circuits, silicon laser, semiconductor lasers, silicon-on-insulator (SOI) technology, adiabatic taper.

Abstract:We present a review of recent developments in THz coherent systems based on photonic local oscillators. We show that such techniques can enable the creation of highly coherent, thus highly sensitive, systems for frequencies ranging from 100 GHz to 5 THz, within an energy efficient integrated platform. We suggest that such systems could enable the THz spectrum to realize its full applications potential. To demonstrate how photonics-enabled THz systems can be realized, we review the performance of key components, show recent demonstrations of integrated platforms, and give examples of applications. References and links1. A. G. Davies and E. H. Linfield, eds., "Special Supplement: THz Technology," Electron. Lett. 46(26), (2010). 2. S. J. Savory, "Digital filters for coherent optical receivers," Opt. Express 16(2), 804-817 (2008). 3. H. Eisele, "480GHz oscillator with an InP Gunn device," Electron. Lett. 46(6), 422-423 (2010). 4. L. Moeller, J. Federici, and K. Su, "THz wireless communications: 2.5 Gb/s error-free transmission at 625 GHz using a narrow-bandwidth 1 mW THz source," XXXth URSI General Assembly and Scientific Symposium (2011). 5. C. C. Renaud, M. Robertson, D. Rogers, R. Firth, P. J. Cannard, R. Moore, and A. J. Seeds, "A high responsivity, broadband waveguide uni-travelling carrier photodiode," Proc. SPIE 61940, 61940C, 61940C-8 (2006

This paper describes the advantages that the introduction of photonic integration technologies can bring to the development of photonic-enabled wireless communications systems operating in the millimeter wave frequency range. We present two approaches for the development of dual wavelength sources for heterodyne-based millimeter wave generation realized using active/passive photonic integration technology. One approach integrates monolithically two distributed feedback semiconductor lasers along with semiconductor optical amplifiers, wavelength combiners, electro-optic modulators and broad bandwidth photodiodes. The other uses a generic photonic integration platform, developing narrow linewidth dual wavelength lasers based on arrayed waveguide gratings. Moreover, data transmission over a wireless link at a carrier wave frequency above 100 GHz is presented, in which the two lasers are free-running, and the modulation is directly applied to the single photonic chip without the requirement of any additional component.

Abstract-This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s. Index Terms-Hybrid photonic integrated circuits, silicon laser, semiconductor lasers, silicon-on-insulator (SOI) technology, adiabatic taper.

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A monolithically integrated tunable heterodyne source designed for the generation and modulation of subterahertz signals is demonstrated. Distributed feedback lasers, semiconductor optical amplifier amplifiers, passive waveguides, beam combiners, electro-optic modulators, and high-speed photodetectors have been monolithically integrated on the same InP-based platform. Millimeter wave generation at up to 105 GHz based on heterodyning the optical tones from two integrated lasers in the integrated high bandwidth unitraveling-carrier photodetector has been demonstrated. This photonic integrated chip was used in a 100-Mb/s OOK wireless transmission experiment using the integrated amplitude modulator.