Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

Abstract

Abstract-This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s. Index Terms-Hybrid photonic integrated circuits, silicon laser, semiconductor lasers, silicon-on-insulator (SOI) technology, adiabatic taper.

Optimization of Hybrid Silicon Lasers for High-Speed Direct Modulation

“…8, with the bias current increasing, the modulation bandwidth increases. The À3 dB bandwidth increases with injection rising and reaches to 7.1 GHz under the injection current of 131 mA at room temperature, which matches well with experimental data (about 7.2 GHz) in [10].…”

“…Recently, this technique has been utilized in short cavity DFB lasers by UCSB, and the modulation speed is increased significantly [24]. In addition, to verify our model and simulation, the dependence of the frequency response on the injection current is also studied and compared with the experimental modulation bandwidth in [10]. Fig.…”

“…However, this tunneling mechanism is weak due to the relative thick barrier width. In this paper, in order to compare with experimental results, we consider the same structure and materials used in [10] unless it is specified. The structure and material parameters of hybrid lasers used in the calculation are listed in the Tables 1 and 2, respectively.…”

“…2. The SOI structure consists of a Si substrate, a 2 m-thick SiO 2 lower cladding layer, The structure of the test laser [10] and a Si ridge waveguide with a height (H), width (W) of 0.34 m and 1 m, respectively. The III-V mesa width is fixed at 1.7 m, as listed in Table 1.…”

“…After that, various kinds of hybrid lasers, such as racetrack [7], Distributed Feedback Bragg (DFB) and Distributed Bragg Reflector (DBR) lasers have been reported [8]- [10]. In [10], the 3 dB bandwidth of around 7 GHz is achieved in hybrid lasers. However, there are still many challenges for applying hybrid lasers directly into optical communication systems.…”