Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon

Abstract

Abstract-This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s. Index Terms-Hybrid photonic integrated circuits, silicon laser, semiconductor lasers, silicon-on-insulator (SOI) technology, adiabatic taper.

Hong–Ou–Mandel interference between independent III–V on silicon waveguide integrated lasers

“…The hybridization is ensured by a molecular bonding of the III-V heterostructure made of an InP PN diode with an InGaAsP multiple quantum well region optimized for lasing operation around 1550nm. The III-V on silicon molecular bonding requires flat and low roughness surfaces of both III-V and silicon, which is obtained respectively by an optimization of the III-V epitaxy and a chemical and mechanical polishing of the SiO 2 top encapsulation layer [24]. The single mode operation is achieved by a Distributed Feedback (DFB) configuration, taking benefit from the high resolution lithography accessible during the silicon patterning for engraving the Bragg reflector on top of the silicon ridge, underneath the III-V gain region [25].…”

High visibility Hong-Ou-Mandel interference from weak-coherent pulses generated by III–V on silicon waveguide integrated lasers

“…The lasers used in this experiment were Distributed Feedback (DFB) based on Indium Phosphide heterogeneously integrated on silicon trough molecular wafer bonding, lasing linearly polarized light at 1534.5 nm. This hybrid III-V on silicon technology was fabricated as described by Duan et al [7].…”

Future Proof Optical Network Infrastructure for 5G Transport

“…The bandwidth efficiency compared to CPRI is improved replacing spectrally inefficient line codes, as 8B/10B, code with more efficient scramblers, e.g. using as generating polynomial 1+ x + x 3 + x 12 + x 16 , leaving space to FEC overhead and in-band signaling.…”

“…The laser wavelength is set by controlling the wavelength selective elements inside the external cavity. Significant progresses toward the realization of low cost hybrid lasers in silicon photonics have been shown in [15] [16] where the III-V integration is realized at wafer level without the need of an active alignment of each single light generator chip to the silicon substrate. These last developments indicate that a practical realization of low-cost, mass producible, high speed multi-channel DWDM transceivers for transmission up to 20 Km in silicon photonic platform is realistic.…”