This paper summarizes recent advances on InAs/InP quantum dashes (QD) materials for lasers and amplifiers, and QD device performance with particular interest for optical communication. We investigate both InAs/InP dashes in a barrier and dashes in a well (DWELL) heterostructures operating at 1.5 µm. These two types of QDs can provide high gain and low losses. Continuous-wave room-temperature lasing operation on ground state of cavity length as short as 200µm has been achieved, demonstrating the high modal gain of the active core. A threshold current density as low as 110 A/cm 2 per QD layer has been obtained for infinite-length DWELL laser. An optimized DWELL structure allows achieving of a T0 larger than 100 K for broad area lasers and of 80 K for single transverse mode lasers in the temperature range between 25°C and 85°C. Buried ridge stripe type single mode DFB lasers are also demonstrated for the first time, exhibiting a side-mode suppression-ratio as high as 45 dB. Such DFB lasers allow the first floor free 10 Gb/s direct modulation for back-to-back and transmission over 16 km standard optical fiber. In addition, novel results are given on gain, noise and four wave mixing of QD-based semiconductor optical amplifiers. Furthermore, we demonstrate that QD FP lasers, owing to the small confinement factor and the 3D quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time jitter characteristics when QD lasers are actively mode-locked. These advances constitute a new step towards the application of QD lasers and amplifiers to the field of optical fiber communications.

Abstract:A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 ⁰C and a thermooptic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

The design, fabrication, and characterization of an amplifying transverse magnetic ͑TM͒-mode optical waveguide isolator operating at a wavelength of 1300 nm are presented. The magneto-optical Kerr effect induces nonreciprocal modal absorption in a semiconductor optical amplifier with a laterally magnetized ferromagnetic metal contact. Current injection in the active structure compensates for the loss in the forward propagation direction. Monolithic integration of this optical isolator configuration with active InP-based photonic devices is straightforward. An optical isolator allows to avoid one of the main noise sources in an optical communication system by blocking optical feedback in the laser source. Current commercial isolators are bulk components requiring collimating lenses and expensive alignment techniques when applied in a laser diode package. Development of an integrated laser-isolator system is highly desirable as it would reduce cost and size and enhance mechanical and thermal stability. The cost reduction of a laser diode package would be the largest with directly modulated lasers, operating at 1300 nm. Traditional research focuses on applying ferrimagnetic garnets to induce nonreciprocity. 1 The interest in this class of materials comes from their unique combination of low optical loss at telecom wavelengths and a considerably strong magneto-optical ͑MO͒ effect, the source of the nonreciprocity. Stand-alone devices with good isolation performance have been reported. The integration with III-V host material however remains an issue. The best reported result demonstrated isolation not higher than 5 dB in a device several millimeters in length. 2A different research approach is based on the requirement that for monolithic integration, the isolator structure should be very similar to that of the laser it is to be integrated with. If, in a standard semiconductor optical amplifier ͑SOA͒, an adequately magnetized ferromagnetic metal is placed very close to the guiding region, the MO Kerr effect induces a nonreciprocal complex shift of the complex effective index of the guided mode. In other words, the modal absorption is different in both propagation directions. The remaining loss in the forward direction can be compensated for by current injection in the active material. The result is a component which-being transparent or amplifying in one direction, while providing loss in the opposite direction-is isolating and can be monolithically integrated with InP-based active photonic devices. A configuration for transverse magnetic ͑TM͒-polarized light was theoretically proposed in 1999 ͑Ref. 3͒ and demonstrated in 2004. 4 Recently, a variant for transverse electric-mode operation has been demonstrated. 5 In spite of the high levels of nonreciprocal absorption that have been reported, all results so far suffer from a large level of insertion loss with consequently an impractically large injection current. In this letter, we present the design, fabrication, and characterization of a TM-mode device demonstratin...

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