Towards foundry approach for silicon photonics: silicon photonics platform ePIXfab

Dumon, Pieter; Bogaerts, Wim; Baets, Roel; Fédéli, J-M.; Fulbert, L.

doi:10.1049/el.2009.1353

Cited by 76 publications

(40 citation statements)

References 16 publications

(26 reference statements)

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“…The fabrication is executed on IMEC's passive silicon photonics platform through the Europractice MPW service [17]. The waveguide cross-section is designed to be 450 nm × 220 nm.…”

Section: Experiments Resultsmentioning

confidence: 99%

Fundamental suppression of backscattering in silicon microrings

Li¹,

Bogaerts²

2017

Opt. Express

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Abstract:In this paper we theoretically prove and experimentally demonstrate a novel approach to eliminate the effects of backscattering in silicon ring resonators. Not only the resonancesplitting can be completely suppressed, but also the unwanted light reflected to the in port and directed to the add port can be dramatically reduced. Ring resonators have become one of the most intensively used integrated optical components for various applications. However, in high-index-contrast platforms like silicon photonics, sidewall roughness induced backscattering imposes limits on the performance of ring resonators. It frequently induces resonance-splitting in through and drop ports. At the same time, there will be unwanted light directed to the add port and reflected to the in port. We show that, by putting an intentional tunable reflector inside the ring to compete with the stochastic backscattering, the ring can work under a normal condition. All resonances can be tuned to be non-split with an improved extinction ratio and there will be significantly less light coming out from the in and the add ports.

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“…The fabrication is executed on IMEC's passive silicon photonics platform through the Europractice MPW service [17]. The waveguide cross-section is designed to be 450 nm × 220 nm.…”

Section: Experiments Resultsmentioning

confidence: 99%

Fundamental suppression of backscattering in silicon microrings

Li¹,

Bogaerts²

2017

Opt. Express

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show abstract

“…Over the last 10 years the achievements reported in SOI fabricated using CMOS technology that exploit both linear and nonlinear optical phenomena [2,23] are impressive [23 -39], ranging from optical buffers [24], optical interconnects [25][26][27], ring resonators [28,29], Raman gain and lasing [30 -32], time lensing [13,33], slow light based on photonic crystals [34 -36], optical regeneration [9], parametric gain [5, 37 -39] to the promise of direct optical transitions [40,41], and even correlated photon pair generation [42].…”

Section: Introductionmentioning

confidence: 99%

New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics

et al. 2013

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“…Over the last 10 years, it has been actively used in tens of photomasks. IPKISS is now in use by over 50 research groups and companies worldwide, and is also supported by the silicon multi-projectwafer service ePIXfab [15], [14] in the form of Process Design Kits (PDK).…”

Section: Access To Ipkissmentioning

confidence: 99%