A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electrically injected continuouswave lasing in InP-based microdisk lasers coupled to a sub-micron silicon wire waveguide, fabricated through heterogeneous integration of InP on silicon-on-insulator (SOI). The InP-based microdisk has a diameter of 7.5 μm and a thickness of 1 μm. A tunnel junction was incorporated to efficiently contact the p-side of the pn-junction. The laser emits at 1.6 μm, with a threshold current as low as 0.5 mA under continuous-wave operation at room temperature, and a threshold voltage of 1.65 V. The SOI-coupled laser slope efficiency was estimated to be 30 μW/mA, with a maximum unidirectional output power of 10 μW.

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Dielectric metasurfaces have become efficient tools for creating ultrathin optical components with various functionalities for imaging, holography, quantum optics, and topological photonics. While static all-dielectric resonant metaphotonics is reaching maturity, challenges remain in the design and fabrication of efficient reconfigurable and tunable metasurface structures. A promising pathway towards tunable metasurfaces is by incorporating phase-transition materials into the photonic structure design. Here we demonstrate Mie-resonant silicon-based metasurfaces tunable via the insulator-to-metal transition of a thin VO2 layer with reversible properties at telecom wavelengths. We experimentally demonstrate two regimes of functional tunability driven by the VO2 transition: (i) two orders of magnitude modulation of the metasurface transmission, (ii) spectral tuning of near-perfect absorption. Both functionalities are accompanied by a hysteresislike behavior that can be exploited for versatile memory effects. Beyond this demonstration of multifunctional properties, this work provides a general framework to efficiently use the full complex refractive index tuning of VO2, both for its refractive index modulation and optical absorption tuning. Tunable dielectric metasurfaces may find their applications in various photonics technologies including optical communications, information storage, imaging, detectors, and sensors.

Abstract-We report on the performance of a compact multiwavelength laser (MWL) source heterogeneously integrated with and coupled to a silicon-on-insulator (SOI) waveguide circuit. The MWL consists of four InP-based microdisk lasers, coupled to a common SOI wire waveguide. The microdisk lasers operate in continuous-wave regime at room temperature, with a threshold current around 0.9 mA and a waveguide-coupled slope efficiency of up to 8 W/mA, for a microdisk diameter of 7.5 m. The output spectrum contains four laser peaks uniformly distributed within the free-spectral range of a single microdisk. While thermal crosstalk is negligible, laser peak output powers vary up to 8 dB for equal microdisk drive currents, as a result of loss due to coupling with higher order modes supported by the 1-m-thick microdisks. This nonuniformity could be eliminated by reducing the microdisk thickness.Index Terms-Heterogeneous integration, microdisk laser, multiwavelength laser source, silicon photonics.

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The wake-up effect is a major issue for ferroelectric HfO 2 -based memory devices. Here, two TiN/HZO/TiN structures deposited by magnetron sputtering on silicon are compared. The maximum remanant polarization is higher than 21 μC/cm 2 for both samples, but a strong difference is observed in the electrical behavior. For the mesa sample, the difference between the maximum and initial remanent polarization is only 3 μC/cm 2 , whereas it is around 14 μC/cm 2 in the non-mesa case. We discuss the root causes of these behaviors in light of GIXRD results.

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