Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit

Campenhout, Joris Van; Romeo, Pédro Rojo; Régrény, Philippe; Seassal, Christian; Thourhout, Dries Van; Verstuyft, Steven; Cioccio, L. Di; Fédéli, Jean-Marc; Lagahe, C.; Baets, Roel

doi:10.1364/oe.15.006744

Cited by 475 publications

(293 citation statements)

References 22 publications

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“…6 Integrating high performance III-V lasers with Si has been considered a promising path to resolve this challenge. Wafer or die bonding has been shown as a successful approach, demonstrating impressive device performances, [7][8][9] and has gradually been adopted by industry. For large-scale photonic integrations, this method introduces process complexity with some remaining issues.…”

mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

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Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

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mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

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“…Light amplifi cation in the laser cavity of this device is achieved by the direct-bandgap material bonded to the silicon. A highly compact realization (Figure 3) involving the bonding of InP-based microdisk lasers on top of silicon nanophotonic waveguides was reported by a group from Ghent University-IMEC [24]. After the fi rst demonstration, more sophisticated designs of III/V-Si hybrid laser were demonstrated by the groups at UC Santa Barbara and at Ghent University, such as the cascaded microdisk lasers and the distributed feedback laser.…”

Section: Silicon Integrated Lasersmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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“…However, efficient light generation directly from silicon, given its indirect bandgap, has not yet been shown. Therefore an alternative approach based on bonding high quality epi-layers on prepatterned silicon waveguide structures has been developed by several groups [2][3][4] [5]. We recently proposed a new structure [6] whereby light in the gain section is maximally confined in the III-V quantum well layers.…”

Section: Introductionmentioning

confidence: 99%

Optimization of taper structures for III-V on Silicon lasers

Thourhout

Keyvaninia

Roelkens

et al. 2012

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials

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IntroductionUsing silicon as a platform for realizing complex integrated photonic circuits is rapidly gaining interest both from the scientific community as from the industry. Tremendous progress in realizing passive devices, high speed modulators and Ge-based detectors has been made over the last decade (for a recent review see [1]). However, efficient light generation directly from silicon, given its indirect bandgap, has not yet been shown. Therefore an alternative approach based on bonding high quality epi-layers on prepatterned silicon waveguide structures has been developed by several groups . We recently proposed a new structure [6] whereby light in the gain section is maximally confined in the III-V quantum well layers. At the ends of the gain section, light is coupled to the silicon waveguide layers using an adiabatic taper. Initial results showed Fabry-Perot type devices operating with threshold currents as low as 30mA and output powers up to 4mW [6]. Here we present a study focusing on the adiabatic taper and show how its design influences the operation of the device.

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Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit

Cited by 475 publications

References 22 publications

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Device engineering for silicon photonics

Optimization of taper structures for III-V on Silicon lasers

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